INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC5887
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 50V(Min)
·High
Speed Switching
·Low
Saturation Voltage-
: V
CE(sat)
=
0.4V(Max)@ (I
C
= 7A; I
B
= 0.35A)
·Complement
to Type 2SA2098
B
APPLICATIONS
·Relay
drivers, lamp drivers, motor drivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
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VALUE
60
UNIT
V
50
6
V
V
15
A
20
3
30
W
2.0
150
-55~150
℃
℃
A
A
Total Power Dissipation @T
C
=25℃
P
T
Total Power Dissipation @T
a
=25℃
T
J
T
stg
Junction Temperature
Storage Temperature
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 1mA; R
BE
=
∞
I
C
= 0.1mA; I
E
= 0
I
E
= 0.1mA; I
C
= 0
I
C
= 7A; I
B
= 0.35A
B
2SC5887
MIN
50
60
6
TYP.
MAX
UNIT
V
V
V
0.4
1.4
10
10
560
100
300
V
V
μA
μA
I
C
= 7A; I
B
= 0.35A
B
Output Capacitance
Current-Gain—Bandwidth Product
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
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V
EB
= 4V; I
C
= 0
I
C
= 1A; V
CE
= 2V
180
I
E
= 0; V
CB
= 10V; f= 1.0MHz
I
C
= 1A; V
CE
= 10V
I
C
= 5A, I
B1
= -I
B2
= 0.25A,
V
CC
=
20V
V
CB
= 40V; I
E
= 0
pF
MHz
50
700
40
ns
ns
ns
isc Website：www.iscsemi.cn
2
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