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SDR3DTX

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size150KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDR3DTX Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

SDR3DTX Parametric

Parameter NameAttribute value
MakerSSDI
package instructionHERMETIC SEALED PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.35 V
JESD-30 codeE-XALF-W2
Maximum non-repetitive peak forward current75 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current3 A
Package body materialUNSPECIFIED
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR3A and SDR3ASMS
thru
SDR3N and SDR3NSMS
3.0 AMPS
50
1200 VOLTS
50 – 80 nsec ULTRA FAST RECTIFIER
FEATURES:
Ultra Fast Recovery:
Designer’s Data Sheet
Part Number/Ordering Information
1/
SDR3
__ __ __
│ │
Screening
2/
│ │
__
= Not Screened
│ │
TX = TX Level
│ │
TXV = TXV
│ │
S = S Level
│ │
Package Type
__
= Axial Leaded
SMS = Surface Mount Square Tab
J = 600V
Family
A = 50 V
B = 100V
K = 800V
D = 200V
M = 1000V
G = 400V
N = 1200V
50-80 ns Max @ 25ºC
4/
85-125 ns Max @ 100ºC
4/
Single Chip Construction
PIV to 1200 Volts
Low Reverse Leakage Current
Hermetically Sealed
For High Efficiency Applications
Available in Axial and Surface Mount Versions
Metallurgically Bonded
TX, TXV, and S-Level Screening Available
2/
MAXIMUM RATINGS
3/
RATING
Peak Repetitive Reverse
Voltage
And
DC Blocking Voltage
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
= 25°C)
SYMBOL
SDR3A and SDR3ASMS
SDR3B and SDR3BSMS
SDR3D and SDR3DSMS
SDR3G and SDR3GSMS
SDR3J and SDR3JSMS
SDR3K and SDR3KSMS
SDR3M and SDR3MSMS
SDR3N and SDR3NSMS
VALUE
50
100
200
400
600
800
1000
1200
3
75
-65 to +175
20
14
SMS
UNIT
V
RRM
V
RWM
V
R
Volts
I
O
I
FSM
T
OP
and T
STG
R
θJL
R
θJE
Axial Leaded
Amp
Amps
°C
°C/W
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, T
A
= 25°C)
Operating & Storage Temperature
Thermal Resistance, Junction to Lead, L = 3/8”
Junction to End Tab
NOTES:
1/
For Ordering Information, Price, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/
Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/
Recovery Conditions: I
F
= 0.5 Amp,
I
R
= 1.0 Amp,
I
RR
to .25 Amp.
5/
For information on operating curves, contact factory.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0013G
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