W28C0108FHT datasheet, PDF - EEWORLD Datasheet

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W28C0108FHT: DescriptionEEPROM; Categorystorage storage; File Size225KB，12 Pages; ManufacturerNorthrop Grumman Electronic Systems

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W28C0108FHT Overview

EEPROM

W28C0108FHT Parametric

Parameter Name	Attribute value
Maker	Northrop Grumman Electronic Systems
package instruction	,
Reach Compliance Code	unknown
Base Number Matches	1

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Advanced Information / Preliminary

W28C0108

Radiation Hardened 128K x 8 CMOS EEPROM

Northrop Grumman Corporation

January 2008

Features

•

Rad Hard nonvolatile 1Mbit (128K x 8) EEPROM

- >10,000 programming cycles

- 100 year retention @ +125°C

- <250 nsec read access time

- 100 msec programming time

- 3.3 Volt (Vdd) read operation

•

Radiation Hardened

- Total Dose up to 300 Krad (Si)

- Transient Logic Upset > 1E8 rads(Si)/sec

- Memory Data Loss > 1E12 rads(Si)/sec

- SEU During READ LETth = 94 Mev-cm

/mg

- SEU in Address/Data Latches,

LETth = 40 Mev-cm

/mg

- Permanent SEU damage (During Write Only),

Atomic Number

≥

- No SEL or data loss to to LET> 94 Mev-cm

/mg

•

No Latchup

•

Full military operating temperature range,

screened to specific test methods for commercial,

Class B, or modified Hi Rel.

•

JEDEC pin compatible in center 32 pins

Supports these commercial features:

Introduction

The W28C0108

radiation hardened

nonvolatile

1Mbit (128K x 8) EEPROM is intended for use in

space and harsh radiation environments where

critical system data (Program Store, Start Up

Read Only Memory, etc.) cannot be compromised

during radiation exposure, or lost during power

outages.

Proven Technology

The W28C0108 is the next device in a family of

successful Northrop Grumman radiation hardened

EEPROM devices that already includes 64K and

256K EEPROM devices. The radiation hardened

robustness of the design (performed by Sandia

National Laboratories) and fabrication process is

flight proven with more than 10,000 radiation

hardened EEPROM devices previously delivered

to production systems. This product line offers the

only

solid-state reprogrammable nonvolatile

memory available today that is inherently

radiation hardened. No special shielding,

specialized packages, redundant devices, or

special power down is required to operate these

devices in severe radiation environments.

Self-Timed Programming

Combined Erase/Write

Auto Program Start

Programming Voltage Internally Generated (Low

Dose application only)

Asynchronous Addressing

128 Word Page

Data Polling

•

All devices screened for memory cycling (500

cycles) and memory retention (>10 years).

INHB

CCCP

A16

A15

A12

VSS

CLK

36 PIN

FLAT

PACK

CPE

VDD

A14

32 WRB_X

A13

A11

27 OEB

A10

CEB

PINOUT

(Top View)

Caution: This device is sensitive to electrostatic discharge. Users should follow proper I.C. handling procedures.

Advanced Information / Preliminary

measured retention activation energy of 1.68 eV

for this device, Arrhenius equation calculations

predict that the 1M EEPROM will have a memory

retention failure rate of < 0.1% at 250 years at

+125 C (95% level of confidence). For operation

beyond 100 krad(Si), data should be written after

every 100 krad(Si) of accumulated total ionizing

dose. In addition to the memory devices

themselves, a key feature of this device is the

radiation hardened peripheral circuitry. This

circuitry remains virtually unaffected by radiation

effects within the limits specified over the full

range of device operation.

PROGRAMMING EXAMPLE

For proper retention and reliability, the memory

devices require careful control of the clear/write

conditions. This applies particularly to the control

of the clear/write voltage. The clear/write time

(pulsewidth) is also important. Consequently, both

a Clock pin and a Vwrite pin are provided. With a

nominal 0.15 MHz clock and Vw = -4.2V±5%, this

device emulates commercial EEPROMs. Under

these conditions, data retention is guaranteed for a

minimum of 10 years at +125 C. The external

clock is required for write mode only, read mode is

asynchronous and no clock is required.

The memory is divided into 1024 pages with 128 bytes in each page. The bytes within a page can be written in any order and

the pages can be programmed in any order. The following example writes the 8k bytes in order from address 0000h to

address 1FFFh.

Hold

INHB LOW

Force

VDD to +3.3V

Force

VW to –4.2V

Switch

INHB HIGH

Write byte 0,page 0 {A(6:0)=0000000,A(16:7)=0000000000,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 1,page 0 {A(6:0)=0000001,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 2,page 0 {A(6:0)=0000010,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 126,page 0 {A(6:0)=1111110,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 127,page 0 {A(6:0)=1111111,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Wait 10.25ms or data poll after 250us

Write byte 0,page 1 {A(6:0)=0000000,A(16:7)=0000000001,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 1,page 1 {A(6:0)=0000001,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 2,page 1 {A(6:0)=0000010,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 126,page 1 {A(6:0)=1111110,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 127,page 1 {A(6:0)=1111111,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Wait 10.25ms or data poll after 250us

: repeat for pages 2-1022

Write byte 0,page 1023 {A(6:0)=0000000,A(16:7)=1111111111,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 1,page 1023 {A(6:0)=0000001,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 2,page 1023 {A(6:0)=0000010,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 126,page 1023 {A(6:0)=1111110,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Write byte 127,page 1023 {A(6:0)=1111111,A(16:7)=xxxxxxxxxx,CEB=0,WEB=0,OEB=1,D=data-in}

Wait 10.25ms or data poll after 250us

Read entire memory to verify contents

Switch

INHB LOW

Force

VW to 0V

Force

VDD to 0V

(along with any inputs not at 0V)

-END-

W28C0108FHT Related Products

	W28C0108FHT	W28C0108FH	W28C0108FBT	W28C0108FBP	W28C0108FCP	W28C0108FCT
Description	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
Maker	Northrop Grumman Electronic Systems	Northrop Grumman Electronic Systems	Northrop Grumman Electronic Systems	Northrop Grumman Electronic Systems	Northrop Grumman Electronic Systems	Northrop Grumman Electronic Systems
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Base Number Matches	1	1	1	1	1	1

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