RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
Features
♦
♦
♦
♦
MAAMGM0002-DIE
Rev E
0.1 Watt Saturated Output Power Level
4 dB Typical Noise Figure
Select-at-Test Biasing
MSAG™ Process
Description
The
MAAMGM0002-Die
is a 0.1W Distributed Amplifier with on-chip
bias networks. This product is fully matched to 50 ohms on both the
input and output. The MMIC can be used as a broadband amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested to ensure performance compliance.
The part is fabricated using M/A-COM’s GaAs Multifunction Self-
Aligned Gate Process.
M/A-COM’s MSAG™ process features robust silicon-like manufac-
turing processes, planar processing of ion implanted transistors, mul-
tiple implant capability enabling power, low-noise, switch and digital
FETs on a single chip, and polyimide scratch protection for ease of
use with automated manufacturing processes. The use of refractory
metals and the absence of platinum in the gate metal formulation
prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦
Test Equipment
♦
Electronic Warfare
♦
Radar
Also Available in:
Description
Part Number
Ceramic Package
MAAMGM0002
Sample Board (Die)
MAAMGM0002-DIE-SMB
SAMPLES
Sample Board (Packaged)
MAAMGM0002-SMB
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50Ω, V
DD
= 5V, I
DQ
= 75 mA
2
, P
in
= 13 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
Noise Figure
Output TOI
Input VSWR
f = 2 GHz
Output VSWR
f = 2 GHz
Gate Current
Drain Current
1.
2.
Symbol
f
P
OUT
PAE
P1dB
G
NF
OTOI
VSWR
VSWR
I
GG
I
DD
7
Minimum
1.0
19.5
21
12
20
9
4
31
1.7:1
1.7:1
<2
100
150
2:1
2:1
mA
mA
Typical
Maximum
18.0
Units
GHz
dBm
%
dBm
dB
dB
dBm
1
T
B
= MMIC Base Temperature
Adjust V
GG
between –1.0 and –0.3 V to achieve I
DQ
indicated.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
Maximum Ratings
3
Parameter
Input Power
Drain Voltage
Gate Voltage
Gate Voltage, Select at Test
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipation (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
HI, MID, LO
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
19.0
+7.0
-1.5
-6.0
120
0.5
170
-55 to +150
Units
dBm
V
V
V
mA
W
°C
°C
MAAMGM0002-DIE
Rev E
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions
4
Parameter
Drain Voltage
Gate Voltage
Gate Voltage, Select at Test
Input Power
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
HI, MID, LO
P
IN
Θ
JC
T
B
Min
4.5
-1.0
Typ
5.0
-0.6
-5.0
13
91.2
Note 5
17
Max
5.5
-0.3
Unit
V
V
V
dBm
°C/W
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C —
Θ
JC
* V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with care. To
operate the device, follow these steps according to which
configuration you are using.
Select-at-Test Gate Bias
Figure 5a.
1. With V
DD
= 0, apply V
GG
= -5V to HI,
MID or LO for desired I
DQ
.
2. Set V
DD
= 5V. Confirm I
DQ
.
3. Power down sequence in reverse.
4.Turn off V
GG
last.
Direct Gate Bias
Figure 5b.
1. With V
DD
= 0 V, set V
GG
= -0.8 V.
2. Set V
DD
= 5 V.
3. Adjust V
GG
for desired I
DQ
.
4. Power down sequence in reverse.
5. Turn off V
GG
last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0.5
2.5
4.5
6.5
8.5
10.5
12.5
14.5
16.5
18.5
20.5
22.5
7
6
5
4
3
2
1
0
2
4
6
8
10
12
14
16
18
Gain, Idq = 25%
Gain, Idq = 35%
Gain, Idq = 50%
NF, Idq = 25%
NF, Idq = 35%
NF, Idq = 50%
MAAMGM0002-DIE
Rev E
12
POUT
PAE
11
10
9
8
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 5V, P
in
= 14dBm.
Frequency (GHz)
Figure 2. Gain and Noise Figure vs Idq as a Relative Percentage of Idss
(50% Idss ~ 100 mA).
6
Input VSWR
Output VSWR
5
4
3
2
1
0.5
2.5
4.5
6.5
8.5
10.5
12.5
14.5
16.5
18.5
20.5
22.5
Frequency (GHz)
Figure 3. Input and Output VSWR.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
Mechanical Information
Chip Size: 2.98 x 1.98 x 0.075 mm
0.127mm.
MAAMGM0002-DIE
Rev E
(
118 x 78 x 3 mils)
0.970mm.
2.853mm.
2.980mm.
1.980mm.
1.828mm.
V
DD
OUT
1.094mm.
0.569mm.
IN
0.152mm.
0
HI
MID
LO
V
GG
GND
1.325mm.
1.625mm.
1.925mm.
2.225mm.
2.525mm.
0
Figure 4. Die Layout
Bond Pad Dimensions
Pad
RF: IN, OUT
Drain Supply Voltage: V
DD
Direct Gate Supply Voltage: V
GG
Select-at-Test Gate Supply Voltage: HI, MID, LO
Ground: GND
Size (μm)
100 x 100
150 x 150
150 x 150
150 x 150
150 x 150
Size (mils)
4x4
6x6
6x6
6x6
6x6
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
RoHS
Compliant
Amplifier, Distributed, 0.1W
1.0-18.0 GHz
V
DD
0.1
μF
MAAMGM0002-DIE
Rev E
100 pF
V
DD
RF
OUT
OUT
RF
IN
IN
HI
MID
LO
V
GG
GND
100 pF
V
GG
0.1
μF
Wirebond required to
reference on-chip Se-
lect-at-Test bias net-
work.
Figure 5a. Required Bonding for Select-at-Test Gate Bias Configuration.
Support
circuitry typical of MMIC characterization fixture for CW testing.
Pad
HI
MID
LO
Applied Voltage (V)
-5
-5
-5
% IDSS
50
35
25
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
Embedded System
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