K4M28163PH-RE75 datasheet, PDF

K4M28163PH-RE75: DescriptionSynchronous DRAM, 8MX16, 6ns, CMOS, PBGA54; Categorystorage storage; File Size116KB，12 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4M28163PH-RE75 Overview

Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FBGA, BGA54,9X9,32
Reach Compliance Code	compliant
Maximum access time	6 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	S-PBGA-B54
memory density	134217728 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	1
Number of terminals	54
word count	8388608 words
character code	8000000
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	8MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA54,9X9,32
Package shape	SQUARE
Package form	GRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)	225
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.00001 A
Maximum slew rate	0.09 mA
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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