UPD44322161GF-A75 datasheet, PDF

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UPD44322161GF-A75: DescriptionCache SRAM, 2MX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100; Categorystorage storage; File Size361KB，40 Pages; ManufacturerNEC Electronics

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UPD44322161GF-A75 Overview

Cache SRAM, 2MX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100

UPD44322161GF-A75 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	7.5 ns
Other features	FLOW-THROUGH ARCHITECTURE
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
length	20 mm
memory density	33554432 bit
Memory IC Type	CACHE SRAM
memory width	16
Number of functions	1
Number of terminals	100
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1.7 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	14 mm
Base Number Matches	1

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PRELIMINARY PRODUCT INFORMATION

MOS INTEGRATED CIRCUIT

PD44322161, 44322181, 44322321, 44322361

32M-BIT CMOS SYNCHRONOUS FAST SRAM

FLOW THROUGH OPERATION

Description

The

PD44322161 is a 2,097,152-word by 16-bit, the

PD44322181 is a 2,097,152-word by 18-bit, the

PD44322321 is

a 1,048,576-word by 32-bit and the

PD44322361 is a 1,048,576-word by 36-bit synchronous static RAM fabricated with

advanced CMOS technology using Full-CMOS six-transistor memory cell.

The

PD44322161,

PD44322181,

PD44322321 and

PD44322361 integrate unique synchronous peripheral circuitry,

2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the

single clock input (CLK).

The

PD44322161,

PD44322181,

PD44322321 and

PD44322361 are suitable for applications which require

synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In

the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation.

The

PD44322161,

PD44322181,

PD44322321 and

PD44322361 are packaged in 100-pin PLASTIC LQFP with a

1.4 mm package thickness or 165-pin PLASTIC FBGA for high density and low capacitive loading.

Features

•

3.3 V or 2.5 V core supply

•

Synchronous operation

•

Internally self-timed write control

•

Burst read / write : Interleaved burst and linear burst sequence

•

Fully registered inputs for flow through operation

•

All registers triggered off positive clock edge

•

3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

•

Fast clock access time : 6.5 ns (133 MHz), 7.5 ns (117 MHz), 8.5 ns (100 MHz)

•

Asynchronous output enable : /G

•

Burst sequence selectable : MODE

•

Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

•

Separate byte write enable : /BW1 to /BW4, /BWE (

PD44322321,

PD44322361)

/BW1 to /BW2, /BWE (

PD44322161,

PD44322181)

Global write enable : /GW

•

Three chip enables for easy depth expansion

•

Common I/O using three state outputs

The information contained in this document is being issued in advance of the production cycle for the

device. The parameters for the device may change before final production or NEC Corporation, at its own

discretion, may withdraw the device prior to its production.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M16026EJ1V0PM00 (1st edition)

Date Published September 2002 NS CP(K)

Printed in Japan

2002

UPD44322161GF-A75 Related Products

	UPD44322161GF-A75	UPD44322161F1-A75-FQ2	UPD44322161GF-A65	UPD44322161F1-A65-FQ2	UPD44322161GF-A85	UPD44322161F1-A85-FQ2	UPD44322161F1-C75-FQ2	UPD44322161F1-C85-FQ2	UPD44322161GF-C75	UPD44322161GF-C85
Description	Cache SRAM, 2MX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	Cache SRAM, 2MX16, 7.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	Cache SRAM, 2MX16, 6.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	Cache SRAM, 2MX16, 6.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	Cache SRAM, 2MX16, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	Cache SRAM, 2MX16, 8.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	Cache SRAM, 2MX16, 7.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	Cache SRAM, 2MX16, 8.5ns, CMOS, PBGA165, 15 X 17 MM, PLASTIC, FBGA-165	Cache SRAM, 2MX16, 7.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100	Cache SRAM, 2MX16, 8.5ns, CMOS, PQFP100, 14 X 20 MM, PLASTIC, LQFP-100
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	QFP	BGA	QFP	BGA	QFP	BGA	BGA	BGA	QFP	QFP
package instruction	LQFP,	LBGA,	LQFP,	LBGA,	LQFP,	15 X 17 MM, PLASTIC, FBGA-165	LBGA,	LBGA,	LQFP,	LQFP,
Contacts	100	165	100	165	100	165	165	165	100	100
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compli	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	7.5 ns	7.5 ns	6.5 ns	6.5 ns	8.5 ns	8.5 ns	7.5 ns	8.5 ns	7.5 ns	8.5 ns
Other features	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE	FLOW-THROUGH ARCHITECTURE
JESD-30 code	R-PQFP-G100	R-PBGA-B165	R-PQFP-G100	R-PBGA-B165	R-PQFP-G100	R-PBGA-B165	R-PBGA-B165	R-PBGA-B165	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
length	20 mm	17 mm	20 mm	17 mm	20 mm	17 mm	17 mm	17 mm	20 mm	20 mm
memory density	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bi	33554432 bit	33554432 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	16	16	16	16	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of terminals	100	165	100	165	100	165	165	165	100	100
word count	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words	2097152 words
character code	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000	2000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16	2MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LQFP	LBGA	LQFP	LBGA	LQFP	LBGA	LBGA	LBGA	LQFP	LQFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK, LOW PROFILE	GRID ARRAY, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY, LOW PROFILE	FLATPACK, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.7 mm	1.4 mm	1.7 mm	1.4 mm	1.7 mm	1.4 mm	1.4 mm	1.4 mm	1.7 mm	1.7 mm
Maximum supply voltage (Vsup)	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	2.625 V	2.625 V	2.625 V	2.625 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	2.375 V	2.375 V	2.375 V	2.375 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	GULL WING	BALL	GULL WING	BALL	GULL WING	BALL	BALL	BALL	GULL WING	GULL WING
Terminal pitch	0.65 mm	1 mm	0.65 mm	1 mm	0.65 mm	1 mm	1 mm	1 mm	0.65 mm	0.65 mm
Terminal location	QUAD	BOTTOM	QUAD	BOTTOM	QUAD	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	14 mm	15 mm	14 mm	15 mm	14 mm	15 mm	15 mm	15 mm	14 mm	14 mm
Maker	-	-	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics

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