TRANSISTOR 4.2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Parameter Name | Attribute value |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 400 V |
Maximum drain current (ID) | 4.2 A |
Maximum drain-source on-resistance | 1.8 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Maximum feedback capacitance (Crss) | 60 pF |
JEDEC-95 code | TO-220AB |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 75 W |
Maximum pulsed drain current (IDM) | 17 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 105 ns |
Maximum opening time (tons) | 80 ns |
Base Number Matches | 1 |