GS81302T10GE-333I datasheet, PDF

GS81302T10GE-333I: DescriptionDDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165; Categorystorage storage; File Size436KB，31 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/; Environmental Compliance

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DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	BGA
package instruction	LBGA,
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Factory Lead Time	12 weeks
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
length	17 mm
memory density	150994944 bit
Memory IC Type	DDR SRAM
memory width	9
Humidity sensitivity level	3
Number of functions	1
Number of terminals	165
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX9
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.5 mm
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15 mm
Base Number Matches	1

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