EN25D16-100VI datasheet, PDF - EEWORLD Datasheet

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EN25D16-100VI: Description16 Megabit Serial Flash Memory; Categorystorage storage; File Size488KB，37 Pages; ManufacturerEon; Websitehttp://www.essi.com.tw/

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EN25D16-100VI Overview

16 Megabit Serial Flash Memory

EN25D16-100VI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Eon
package instruction	HVSON, SOLCC8,.25
Reach Compliance Code	unknow
Other features	IT ALSO OPERATES AT REGULATED SUPPLY VOLTAGE 3 TO 3.6 V
Maximum clock frequency (fCLK)	100 MHz
Data retention time - minimum	20
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-N8
length	6 mm
memory density	16777216 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	8
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX8
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial	SERIAL
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	0.84 mm
Serial bus type	SPI
Maximum standby current	0.000005 A
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
type	NOR TYPE
width	5 mm
write protect	HARDWARE/SOFTWARE

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EN25D16

16 Megabit Serial Flash Memory

with 4Kbyte Uniform Sector and Dual Output

FEATURES

•

Single power supply operation

- Full voltage range: 2.7-3.6 volt

•

16 Mbit Serial Flash

- 16 M-bit/2048 K-byte/8192 pages

- 256 bytes per programmable page

•

High performance

- 75MHz clock rate

- Dual Output Fast Read instruction

•

Low power consumption

- 5 mA typical active current

- 1

μA

typical power down current

•

Uniform Sector Architecture:

512 sectors of 4-Kbyte

32 blocks of 64-Kbyte

Any sector or block can be

erased individually

•

Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

•

High performance program/erase speed

Page program time: 1.5ms typical

Sector erase time: 150ms typical

Block erase time 800ms typical

Chip erase time: 18 Seconds typical

•

Lockable 512 byte OTP security sector

•

Minimum 100K endurance cycle

•

Package Options

8 pins SOP 200mil body width

8 contact VDFN

8 pins PDIP

16 pin SOP 300mil body width

All Pb-free packages are RoHS compliant

•

Industrial temperature Range

GENERAL DESCRIPTION

The EN25D16 is a 16M-bit (2048K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25D16 is designed to allow either single Sector at a time or full chip erase operation. The

EN25D16 can be configured to protect part of the memory as the software protected mode. The

device can sustain a minimum of 100K program/erase cycles on each sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2008/06/23

EN25D16

SIGNAL DESCRIPTION

Serial Data Input (DI)

The SPI Serial Data Input (DI) pin provides a means for instructions, addresses and data to be

serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock (CLK)

input pin.

Serial Data Output (DO)

The SPI Serial Data Output (DO) pin provides a means for data and status to be serially read from

(shifted out of) the device. Data is shifted out on the falling edge of the Serial Clock (CLK) input pin.

Serial Clock (CLK)

The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See

SPI Mode")

Chip Select (CS#)

The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device

is deselected and the Serial Data Output (DO) pin is at high impedance. When deselected, the

devices power consumption will be at standby levels unless an internal erase, program or status

consumption will increase to active levels and instructions can be written to and data read from the

device. After power-up, CS# must transition from high to low before a new instruction will be

accepted.

Hold (HOLD#)

The HOLD pin allows the device to be paused while it is actively selected. When HOLD is brought

low, while CS# is low, the DO pin will be at high impedance and signals on the DI and CLK pins will

be ignored (don’t care). The hold function can be useful when multiple devices are sharing the same

SPI signals.

Write Protect (WP#)

The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in

conjunction with the Status Register’s Block Protect (BP0, BP1and BP2) bits and Status Register

Protect (SRP) bits, a portion or the entire memory array can be hardware protected.

Table 1. PIN Names

Symbol

CLK

CS#

WP#

HOLD#

Vcc

Vss

Pin Name

Serial Clock Input

Serial Data Input

Serial Data Output

Chip Enable

Write Protect

Hold Input

Supply Voltage (2.7-3.6V)

Ground

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. B, Issue Date: 2008/06/23

EN25D16-100VI Related Products

	EN25D16-100VI	EN25D16	EN25D16-100HI	EN25D16-75HI
Description	16 Megabit Serial Flash Memory	16 Megabit Serial Flash Memory	16 Megabit Serial Flash Memory	Flash, 2MX8, PDSO8, SOP-8

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