MMBD914 datasheet, PDF - EEWORLD Datasheet

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MMBD914: DescriptionReverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 300mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 300mA, trr=4ns, VF=855mV @10mA,PD=350mW; CategoryDiscrete semiconductor diode; File Size357KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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Reverse recovery time (trr): 4ns DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 300mA Forward voltage drop (Vf): 1.25V @ 150mA 100V, 300mA, trr=4ns, VF=855mV @10mA,PD=350mW

MMBD914 Parametric

Parameter Name	Attribute value
Maker	JCET
Reach Compliance Code	unknown

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

MMBD914

SOT-23

SWITCHING DIODE

FEATURES

High-Speed

Switching Diode

MARKING:

Maximum Ratings @Ta=25℃

Parameter

Non-Repetitive Peak Reverse Voltage

Peak Repetitive Peak Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Output Current

Peak Forward Surge Current

Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

RRM

RWM

FSM

θJA

STG

Limit

100

300

0.5

350

357

150

-55~+150

Unit

℃/W

℃

Electrical Characteristics@Ta=25℃

Parameter

Reverse Breakdown Voltage

Symbol

(BR)

Forward Voltage

Reverse Current

Diode Capacitance

Reverse Recovery Time

Min

100

715

855

1000

1250

Typ

Max

Unit

=100μA

=1mA

=10mA

=50mA

=150mA

=75V

=20V

=0,f=1MHz

=10mA,

=0.1*I

Conditions

A,May,2011

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