MPS2222-5 datasheet, PDF - EEWORLD Datasheet

MPS2222-5: Description600mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size161KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MPS2222-5 Overview

600mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR

Parameter Name	Attribute value
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-based maximum capacity	8 pF
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	75
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
VCEsat-Max	1.6 V

	MPS2222-5	MPS2222A18	MPS2222-18	MPS2222A5
Description	600mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR	600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR	Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon	600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.6 A	0.6 A	0.6 A	0.6 A
Collector-based maximum capacity	8 pF	8 pF	8 pF	8 pF
Collector-emitter maximum voltage	30 V	40 V	30 V	40 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	75	75	75	75
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	300 MHz	250 MHz	300 MHz
VCEsat-Max	1.6 V	1 V	1.6 V	1 V

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