U424-TO-78 datasheet, PDF - EEWORLD Datasheet

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U424-TO-78: DescriptionSmall Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, TO-78, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size271KB，1 Pages; ManufacturerLinear ( ADI ); Websitehttp://www.analog.com/cn/index.html

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U424-TO-78 Overview

Small Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, TO-78, 6 PIN

U424-TO-78 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-78
package instruction	CYLINDRICAL, O-MBCY-W6
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	COMPLEX
Minimum drain-source breakdown voltage	40 V
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	1.5 pF
JESD-30 code	O-MBCY-W6
Number of components	2
Number of terminals	6
Operating mode	DEPLETION MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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U424

HIGH INPUT IMPEDANCE

MONOLITHIC DUAL

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix U424

The U424 is a high input impedance Monolithic Dual N-Channel JFET

The U424 monolithic dual n-channel JFET is designed

to provide very high input impedance for differential

amplification and impedance matching. Among its

many unique features, this series offers operating gate

current specified at -500 fA. The U424 is a direct

replacement for discontinued Siliconix U424.

The hermetically sealed TO-71 & TO-78 packages are

well suited for military applications. The 8 Pin P-DIP

and 8 Pin SOIC provide ease of manufacturing, and the

symmetrical pinout prevents improper orientation.

(See Packaging Information).

FEATURES

HIGH INPUT IMPEDANCE

HIGH GAIN

LOW POWER OPERATION

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted)

= 0.25pA MAX

gfs = 120µmho MIN

GS(OFF)

= 2V MAX

U424 Applications:

Ultra Low Input Current Differential Amps

High-Speed Comparators

Impedance Converters

Maximum Temperatures

Storage Temperature

‐65°C to +150°C

Operating Junction Temperature

+150°C

Maximum Voltage and Current for Each Transistor – Note 1

‐V

GSS

Gate Voltage to Drain or Source

40V

‐V

DSO

Drain to Source Voltage

40V

‐I

G(f)

Gate Forward Current

10mA

Maximum Power Dissipation

Device Dissipation @ Free Air – Total 400mW @ +125°C

MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED

SYMBOL

CHARACTERISTICS VALUE UNITS CONDITIONS

|∆V

GS1‐2

/∆T|max.

DRIFT VS.

µV/°C V

=10V, I

=30µA

TEMPERATURE

=‐55°C to +125°C

| V

GS1‐2

| max.

OFFSET VOLTAGE

=10V, I

=30µA

TYP.

‐‐

200

‐‐

0.1

‐‐

MAX.

‐‐

1500

350

1000

2.0

1.8

.25

250

1.0

3.0

‐‐

3.0

1.5

UNITS

µmho

µA

µmho

nV/√Hz

CONDITIONS

= 0 I

=1nA

= 1µA I

= 0 I

= 0

= 10V V

= 0V f = 1kHz

= 10V I

= 30µA f = 1kHz

= 10V V

= 0V

= 10V I

= 1nA

= 10V I

= 30µA

= 10V I

= 30µA

= +125°C

= 0V V

= 20V

= +125°C

= 10V V

= 0V

= 10V I

= 30µA

∆V

= 10 to 20V I

= 30µA

∆V

= 5 to 10V I

= 30µA

= 10V I

= 30µA R

= 10MΩ

f = 10Hz

= 10V I

= 30µA f = 10Hz

= 10V I

= 30µA f = 1KHz

= 10V V

= 0 f = 1MHz

P-DIP / SOIC (Top View)

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

MIN.

GSS

Breakdown Voltage

GGO

Gate‐To‐Gate Breakdown

TRANSCONDUCTANCE

fSS

Full Conduction

300

Typical Operation

120

DRAIN CURRENT

DSS

Full Conduction

GATE VOLTAGE

GS(off)

Pinchoff voltage

‐‐

Operating Range

‐‐

GATE CURRENT

max.

Operating

‐‐

‐I

max.

High Temperature

‐‐

GSS

max.

At Full Conduction

‐‐

‐I

GSS

max.

High Temperature

‐‐

OUTPUT CONDUCTANCE

OSS

Full Conduction

‐‐

Operating

‐‐

COMMON MODE REJECTION

CMR

‐20 log | ∆V

GS1‐2

/ ∆V

‐‐

‐20 log | ∆V

GS1‐2

/ ∆V

‐‐

NOISE

Figure

‐‐

Voltage

‐‐

CAPACITANCE

ISS

Input

‐‐

RSS

Reverse Transfer

‐‐

Click To Buy

Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired

TO-71 / TO-78 (Top View)

Available Packages:

U424 in TO-71 & TO-78

U424 in PDIP & SOIC

U424 available as bare die

Please contact

Micross

for full package and die dimensions

Email:

chipcomponents@micross.com

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

U424-TO-78 Related Products

	U424-TO-78	U424	U424-PDIP-8	U424-SOIC-8	U424-TO-71
Description	Small Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, TO-78, 6 PIN	Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET, TO-71	Small Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, PLASTIC, DIP-8	Small Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8	Small Signal Field-Effect Transistor, 40V, 2-Element, N-Channel, Silicon, Junction FET, HERMETIC SEALED, TO-71, 6 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
Base Number Matches	1	1	1	1	1
Parts packaging code	TO-78	-	DIP	SOT	TO-71
package instruction	CYLINDRICAL, O-MBCY-W6	-	IN-LINE, R-PDIP-T8	SMALL OUTLINE, R-PDSO-G8	CYLINDRICAL, O-MBCY-W6
Contacts	8	-	8	8	6
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Configuration	COMPLEX	-	COMPLEX	COMPLEX	COMPLEX
Minimum drain-source breakdown voltage	40 V	-	40 V	40 V	40 V
FET technology	JUNCTION	-	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	1.5 pF	-	1.5 pF	1.5 pF	1.5 pF
JESD-30 code	O-MBCY-W6	-	R-PDIP-T8	R-PDSO-G8	O-MBCY-W6
Number of components	2	-	2	2	2
Number of terminals	6	-	8	8	6
Operating mode	DEPLETION MODE	-	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	METAL	-	PLASTIC/EPOXY	PLASTIC/EPOXY	METAL
Package shape	ROUND	-	RECTANGULAR	RECTANGULAR	ROUND
Package form	CYLINDRICAL	-	IN-LINE	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
surface mount	NO	-	NO	YES	NO
Terminal form	WIRE	-	THROUGH-HOLE	GULL WING	WIRE
Terminal location	BOTTOM	-	DUAL	DUAL	BOTTOM
transistor applications	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON

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