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S1NB80

Description
Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, PLASTIC, MDI, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerDiotec Electronics Corp
Environmental Compliance
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S1NB80 Overview

Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, PLASTIC, MDI, 4 PIN

S1NB80 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDIP-T4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeR-PDIP-T4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Base Number Matches1

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Description Bridge Rectifier Diode, 1 Phase, 1A, 800V V(RRM), Silicon, PLASTIC, MDI, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, PLASTIC, MDI, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, PLASTIC, MDI, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, PLASTIC, MDI, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, PLASTIC, MDI, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon, PLASTIC, MDI, 4 PIN Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, PLASTIC, MDI, 4 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Contacts 4 4 4 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage 800 V 50 V 100 V 1000 V 200 V 400 V 600 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V 1.05 V
JESD-30 code R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 50 V 100 V 1000 V 200 V 400 V 600 V
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 1 1 -

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