INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU4508DF
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Switching Speed
·Built-in
Damper Diode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CES
Collector- Emitter Voltage(V
BE
= 0)
1500
V
V
CEO
Collector-Emitter Voltage
800
V
V
EBO
Emitter-Base Voltage
7.5
V
I
C
I
CM
Collector Current- Continuous
8
A
Collector Current-Peak
15
A
I
B
Base Current- Continuous
4
A
I
BM
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
6
A
P
C
45
W
℃
℃
T
J
150
T
stg
Storage Temperature Range
-65~150
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU4508DF
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0, L= 25mH
800
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 600mA; I
C
= 0
7.5
V
V
CE
(sat)
V
BE
(sat)
I
CES
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1.25A
3.0
V
Base-Emitter Saturation Voltage
I
C
= 5A; I
B
= 1.25A
V
CE
= 1500V; V
BE
= 0
V
CE
= 1500V; V
BE
= 0; T
C
=125℃
I
C
= 0.5A; V
CE
= 5V
7
1.03
1.0
2.0
V
Collector Cutoff Current
mA
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
I
C
= 5A; V
CE
= 5V
4.2
7.3
V
ECF
C-E Diode Forward Voltage
I
F
= 5A
2.2
V
Switching times
μs
μs
t
stg
t
f
Storage Time
I
C
= 5A, I
B1
= 1.0A; I
B2
= -2.5A
Fall Time
3.75
0.4
isc Website：www.iscsemi.cn
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