TLP421
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP421
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
Unit in mm
The TOSHIBA TLP421 consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
RMS
(min)).
•
•
•
•
•
Collector-emitter voltage: 80V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 5000V
rms
(min.)
UL recognized: UL1577
BSI approved: BS EN60065: 2002
Approved no.8411
BS EN60950-1: 2002
Approved no.8412
1
2
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
4
3
TOSHIBA
11−5B2
Weight: 0.26 g (typ.)
Pin Configurations
(top view)
•
SEMKO approved: EN60065, EN60950, EN60335
Approved no.9910249/01
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2007-10-01
TLP421
•
Option(D4)type
TÜV approved: DIN EN 60747-5-2
Approved no. R9950202
Maximum operating insulation voltage: 890V
PK
Maximum permissible overvoltage: 8000V
PK
(Note): When a EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”
Making the VDE application: DIN EN 60747-5-2
•
Construction mechanical rating
7.62mm Pitch
Typical Type
Creepage distance
Clearance
Insulation thickness
7.0mm(min)
7.0mm(min)
0.4mm(min)
10.16mm Pitch
TLPxxxF Type
8.0mm(min)
8.0mm(min)
0.4mm(min)
Current Transfer Ratio
Type
Classi−
fication
(*1)
(None)
Rank Y
TLP421
Rank GR
Rank BL
Rank GB
Current Transfer Ratio (%)
(I
C
/ I
F
)
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Min
Max
50
50
100
200
100
600
150
300
600
600
Marking Of Classification
Blank, Y, Y+, G, G+, B, B+, GB
Y, Y+
G, G+
B, B+
G, G+, B, B+, GB
(*1): Ex. rank GB: TLP421 (GB)
(Note): Application type name for certification test, please use standard product type name, i. e.
TLP421 (GB): TLP421
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2007-10-01
TLP421
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating(Ta
≥
39°C)
Pulse forward current
LED
Power dissipation
Power dissipation derating
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Power dissipation(single circuit)
Power dissipation derating
(Ta
≥
25°C)(single circuit)
Junction temperature
Operating temperature range
Storage temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating
(Ta
≥
25°C)
Isolation voltage
(Note 3)
(Note 2)
Symbol
I
F
ΔI
F
/ °C
I
FP
P
D
ΔP
D
/ °C
V
R
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/ °C
T
j
T
opr
T
stg
T
sol
P
T
ΔP
T
/ °C
BV
S
Rating
60
−0.7
1
100
−1.0
5
125
80
7
50
150
−1.5
125
−55~100
−55~125
260
250
−2.5
5000
Unit
mA
mA / °C
A
mW
mW / °C
V
°C
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2): 100μs pulse, 100Hz frequency
(Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min
―
―
―
−25
Typ.
5
16
1
―
Max
24
25
10
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2007-10-01
TLP421
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 24 V (ambient light
below 1000
ℓx)
V
CE
= 24 V (ambient light
Ta = 85°C
below 1000
ℓx)
V = 0, f = 1 MHz
Min
1.0
―
―
80
7
―
―
―
Typ.
1.2
―
30
―
―
0.01
(0.1)
0.6
(1)
10
Max
1.3
10
―
―
―
0.1
(10)
50
(50)
―
Unit
V
μA
pF
V
V
μA
μA
pF
Detector
Collector dark current
I
D
(I
CEO
)
Capacitance
(collector to emitter)
C
CE
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 5 mA, V
CE
= 5 V
MIn
50
Rank GB
100
―
Rank GB
30
―
―
Rank GB
―
Typ.
―
―
60
―
―
0.2
―
Max
600
600
―
―
0.4
―
0.4
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
IF = 1 mA, V
CE
= 0.4 V
I
C
= 2.4 mA, I
F
= 8 mA
%
Collector−emitter saturation
voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance
(input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1 MHz
V
S
= 500 V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min
―
1×10
12
Typ.
0.8
10
14
Max
―
―
―
―
―
Unit
pF
Ω
V
rms
Vdc
5000
―
―
―
10000
10000
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2007-10-01
TLP421
Switching Characteristics
(Ta = 25°C)
Characteristics
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
V
CC
= 5 V, I
F
= 16 mA
(Fig.1)
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
Test Condition
Min
―
―
―
―
―
―
―
Typ.
2
3
3
3
2
25
50
Max
―
―
―
―
―
―
―
μs
μs
Unit
I
F
I
F
R
L
V
CC
V
CE
V
CE
t
s
V
CC
4.5V
0.5V
t
ON
t
OFF
Fig.1 Switching time test circuit
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2007-10-01
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