KAT54HT1 datasheet, PDF - EEWORLD Datasheet

KAT54HT1: Description0.2 A, 30 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size31KB，1 Pages; ManufacturerKEXIN; Websitehttp://www.kexin.com.cn/html/index.htm

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KAT54HT1 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC, CASE 477-02, 2 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	TIN LEAD
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
Craftsmanship	SCHOTTKY
structure	SINGLE
Diode component materials	SILICON
Maximum power consumption limit	0.2000 W
Diode type	SIGNAL DIODE
Maximum reverse recovery time	0.0050 us
Maximum repetitive peak reverse voltage	30 V
Maximum average forward current	0.2000 A

	KAT54HT1	BAT54HT1
Description	0.2 A, 30 V, SILICON, SIGNAL DIODE	0.2 A, 30 V, SILICON, SIGNAL DIODE
Number of terminals	2	2
Number of components	1	1
Processing package description	PLASTIC, CASE 477-02, 2 PIN	PLASTIC, CASE 477-02, 2 PIN
state	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes
Terminal form	GULL WING	GULL WING
terminal coating	TIN LEAD	TIN LEAD
Terminal location	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY
Craftsmanship	SCHOTTKY	SCHOTTKY
structure	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Maximum power consumption limit	0.2000 W	0.2000 W
Diode type	SIGNAL DIODE	SIGNAL DIODE
Maximum reverse recovery time	0.0050 us	0.0050 us
Maximum repetitive peak reverse voltage	30 V	30 V
Maximum average forward current	0.2000 A	0.2000 A

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