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BAT54HT1

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size31KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BAT54HT1 Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT54HT1 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC, CASE 477-02, 2 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingTIN LEAD
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Maximum power consumption limit0.2000 W
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A

BAT54HT1 Related Products

BAT54HT1 KAT54HT1
Description 0.2 A, 30 V, SILICON, SIGNAL DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE
Number of terminals 2 2
Number of components 1 1
Processing package description PLASTIC, CASE 477-02, 2 PIN PLASTIC, CASE 477-02, 2 PIN
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes
Terminal form GULL WING GULL WING
terminal coating TIN LEAD TIN LEAD
Terminal location DUAL DUAL
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY
structure SINGLE SINGLE
Diode component materials SILICON SILICON
Maximum power consumption limit 0.2000 W 0.2000 W
Diode type SIGNAL DIODE SIGNAL DIODE
Maximum reverse recovery time 0.0050 us 0.0050 us
Maximum repetitive peak reverse voltage 30 V 30 V
Maximum average forward current 0.2000 A 0.2000 A

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