RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-
off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
1 pF
3.9 nH
1.5 pF
50 Ohm
.02
λ
12 nH
15 Ohm
2.2
µF
2.2
µF
110 Ohm
.03
λ
110 Ohm
.03
λ
50 Ohm
.02
λ
1.5 pF
RF Input
DUT
RF Output
47 nH
Gate
Supply
Drain
Supply
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line
tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at 4.5V, 200
mA quiesent bias:
Optimum OIP3
Gamma Load
Mag
Ang (deg)
0.314
0.538
0.566
0.495
179.0
‑176.0
‑169.0
‑159.0
Freq
(GHz)
0.9
2
2.4
3.9
Gamma Source
Mag
Ang (deg)
0.413
0.368
0.318
0.463
10.5
162.0
169.0
‑134.0
OIP3
(dBm)
42.7
42.5
42.0
40.3
Gain
(dB)
16.0
15.8
14.1
9.6
P1dB
(dBm)
27.0
27.5
27.4
27.3
PAE
(%)
54.0
55.3
53.5
43.9
Freq
(GHz)
0.9
2
2.4
3.9
Gamma Source
Mag
Ang (deg)
0.587
0.614
0.649
0.552
12.7
126.1
145.0
‑162.8
Optimum P1dB
Gamma Load
Mag
Ang (deg)
0.613
0.652
0.682
0.670
‑172.1
‑172.5
‑171.5
‑151.2
OIP3
(dBm)
39.1
39.5
40.0
38.1
Gain
(dB)
14.5
12.9
12.0
9.6
P1dB
(dBm)
29.3
29.3
29.4
27.9
PAE
(%)
49.6
49.5
46.8
39.1
4
ATF-521P8 Typical Performance Curves
(at 25°C unless specified otherwise)
Tuned for Optimal OIP3
50
45
40
OIP3 (dBm)
OIP3 (dBm)
45
40
35
30
25
20
15
400
10
100
150
200
250
I
d
(mA)
300
4.5V
4V
3V
50
45
40
OIP3 (dBm)
35
30
25
20
15
10
100
150
200
250
I
d
(mA)
300
4.5V
4V
3V
35
30
25
20
15
4.5V
4V
3V
350
350
400
10
100
150
200
250
I
d
(mA)
300
350
400
Figure 8. OIP3 vs. I
ds
and V
ds
at 2 GHz.
Figure 9. OIP3 vs. I
ds
and V
ds
at 900 MHz.
Figure 10. OIP3 vs. I
ds
and V
ds
at 3.9 GHz.
35
35
35
30
P1dB (dBm)
P1dB (dBm)
30
P1dB (dBm)
4.5V
4V
3V
30
25
25
25
20
4.5V
4V
3V
20
20
4.5V
4V
3V
15
15
15
10
100
150
200
250
I
dq
(mA)
300
350
400
10
100
150
200
250
I
dq
(mA)
300
350
400
10
100
150
200
250
I
dq
(mA)
300
350
400
Figure 11. P1dB vs. I
dq
and V
ds
at 2 GHz.
Figure 12. P1dB vs. I
dq
and V
ds
at 900 MHz.
Figure 13. P1dB vs. I
dq
and V
ds
at 3.9 GHz.
17
16
15
GAIN (dBm)
GAIN (dBm)
17
16
15
14
13
12
11
400
10
100
4.5V
4V
3V
12
11
10
GAIN (dBm)
14
13
12
11
10
100
150
200
250
I
d
(mA)
300
4.5V
4V
3V
9
8
7
6
4.5V
4V
3V
350
150
200
250
I
d
(mA)
300
350
400
5
100
150
200
250
I
d
(mA)
300
350
400
Figure 14. Small Signal Gain vs I
ds
and V
ds
at 2 GHz.
Figure 15. Small Signal Gain vs I
ds
and V
ds
at 900 MHz.
Figure 16. Small Signal Gain vs I
ds
and V
ds
at 3.9 GHz.
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET, MO-229, 2 X 2 MM, 0.75 MM HEIGHT,LEAD FREE, PLASTIC,LPCC-8
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