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FT1000BV-80

Description
Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 4000V V(DRM), 4000V V(RRM), FLAT PACKAGE
CategoryAnalog mixed-signal IC    Trigger device   
File Size178KB,1 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric View All

FT1000BV-80 Overview

Silicon Controlled Rectifier, 1570A I(T)RMS, 1000000mA I(T), 4000V V(DRM), 4000V V(RRM), FLAT PACKAGE

FT1000BV-80 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.5 V
Maximum leakage current120 mA
On-state non-repetitive peak current20000 A
Maximum on-state current1000000 A
Maximum operating temperature125 °C
Minimum operating temperature-45 °C
Certification statusNot Qualified
Maximum rms on-state current1570 A
Off-state repetitive peak voltage4000 V
Repeated peak reverse voltage4000 V
surface mountNO
Trigger device typeSCR
Base Number Matches1
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