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2SK3832

Description
Power Field-Effect Transistor, 30A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size42KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SK3832 Overview

Power Field-Effect Transistor, 30A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PB, 3 PIN

2SK3832 Parametric

Parameter NameAttribute value
Objectid2064451678
Parts packaging codeTO-3PB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)56 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)65 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

2SK3832 Related Products

2SK3832 2SK3832_04
Description Power Field-Effect Transistor, 30A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PB, 3 PIN N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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