Power Field-Effect Transistor, 30A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PB, 3 PIN
Parameter Name | Attribute value |
Objectid | 2064451678 |
Parts packaging code | TO-3PB |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 56 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 100 V |
Maximum drain current (ID) | 30 A |
Maximum drain-source on-resistance | 0.08 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 65 W |
Maximum pulsed drain current (IDM) | 120 A |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
2SK3832 | 2SK3832_04 | |
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Description | Power Field-Effect Transistor, 30A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PB, 3 PIN | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |