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HAT2168N-EL-E

Description
30 A, 30 V, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size109KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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HAT2168N-EL-E Overview

30 A, 30 V, N-CHANNEL, Si, POWER, MOSFET

HAT2168N-EL-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeLFPAK-i
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging codePTSP0008DC-A8
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)30 A
Maximum drain current (ID)30 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)15 W
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
HAT2168N
Silicon N Channel Power MOS FET
Power Switching
REJ03G1682-0200
Rev.2.00
May 27, 2008
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.3 m
typ. (at V
GS
= 10 V)
Power Supply for Server and Telecom (Indoor use)
Outline
RENESAS Package code: PTSP0008DC-A
(Package name: LFPAK-i)
1(S)
2(S)
3(S)
4(G)
5 6 7 8
D
DDD
2X
XX
8(D)
7(D)
6(D)
5(D)
4
G
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tch = 25
°
C, Rg
50
3. Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
Note1
I
D(pulse)
Ratings
30
±20
30
120
30
15
22
15
8.33
150
– 55 to + 150
Unit
V
V
A
A
A
A
mJ
W
°
C/W
°
C
°
C
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 1 of 6

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Description 30 A, 30 V, N-CHANNEL, Si, POWER, MOSFET 30 A, 30 V, N-CHANNEL, Si, POWER, MOSFET
Number of components 1 1
Number of terminals 8 8
surface mount YES Yes
Terminal form GULL WING GULL WING
Terminal location DUAL pair
transistor applications SWITCHING switch
Transistor component materials SILICON silicon
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