HAT2168N
Silicon N Channel Power MOS FET
Power Switching
REJ03G1682-0200
Rev.2.00
May 27, 2008
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.3 m
Ω
typ. (at V
GS
= 10 V)
•
Power Supply for Server and Telecom (Indoor use)
•
•
•
•
•
Outline
RENESAS Package code: PTSP0008DC-A
(Package name: LFPAK-i)
1(S)
2(S)
3(S)
4(G)
5 6 7 8
D
DDD
2X
XX
8(D)
7(D)
6(D)
5(D)
4
G
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25
°
C, Rg
≥
50
Ω
3. Tc = 25
°
C
Symbol
V
DSS
V
GSS
I
D
Note1
I
D(pulse)
Ratings
30
±20
30
120
30
15
22
15
8.33
150
– 55 to + 150
Unit
V
V
A
A
A
A
mJ
W
°
C/W
°
C
°
C
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 1 of 6
HAT2168N
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
±20
—
—
1.0
—
—
30
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
6.3
9.1
50
1730
400
130
0.55
11
5
2.4
8
20
40
4
0.85
25
Max
—
—
±10
1
2.5
8.2
13.8
—
—
—
—
—
—
—
—
—
—
—
—
1.10
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
= ±100
µA,
V
DS
= 0
V
GS
= ±16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 4.5 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
V
DD
≅
10 V
R
L
= 0.67
Ω
Rg = 4.7
Ω
I
F
= 30 A, V
GS
= 0
Note4
I
F
= 30 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 2 of 6
HAT2168N
Main Characteristics
Power vs. Temperature Derating
40
500
100
10
µs
1m
10
0
µ
s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
30
Drain Current I
D
(A)
10
DC
Op
PW
era
=1
nT
s
20
tio
0m
s
°
C
c=
1
Operation in
this area is
0.1 limited by R
DS(on)
Ta = 25°C
1 shot Pulse
0.3
1
3
25
10
0
50
100
150
200
0.01
0.1
10
30
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
50
Typical Transfer Characteristics
50
10 V
3.2 V
Drain Current I
D
(A)
Drain Current I
D
(A)
40
4.5 V
3.0 V
40
V
DS
= 10 V
Pulse Test
30
2.8 V
30
20
2.6 V
V
GS
= 2.4 V
20
Tc = 75°C
10
10
25°C
-25°C
Pulse Test
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Voltage V
DS(on)
(mV)
Drain to Source On State Resistance
R
DS(on)
(m
Ω
)
250
Pulse Test
200
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
5
2
1
1
0.3
10
3
100
30
1000
V
GS
= 4.5 V
10 V
150
I
D
= 20 A
100
10 A
50
5A
0
4
8
12
16
20
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 3 of 6
HAT2168N
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I
D
= 20 A
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
100
30
10
3
1
0.3
0.1
0.1
0.3
1
3
25°C
Tc = -25°C
75°C
12
V
GS
= 4.5 V
8
10 A, 5A
5 A, 10 A, 20 A
4
0
-25
10 V
V
DS
= 10 V
Pulse Test
10
30
100
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
100
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
0
Coss
Crss
Reverse Recovery Time trr (ns)
50
20
di/dt = 100 A/µs
V
GS
= 0, Ta = 25°C
10
0.1
0.3
1
3
10
30
100
Capacitance C (pF)
Ciss
V
GS
= 0
f = 1 MHz
5
10
15
20
25
30
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
I
D
= 30 A
V
GS
V
DD
= 25 V
10 V
5V
20
100
Switching Characteristics
tr
Switching Time t (ns)
40
16
td(off)
30
30
V
DS
12
10
td(on)
tf
20
8
10
V
DD
= 25 V
10 V
5V
8
16
24
32
4
0
40
3
V
GS
= 10 V, V
DS
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
0.3
1
3
10
30
100
0
1
0.1
Gate Charge Qg (nc)
Drain Current I
D
(A)
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 4 of 6
HAT2168N
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy E
AR
(mJ)
50
25
I
AP
= 15 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current I
DR
(A)
10 V
40
5V
V
GS
= 0
20
30
15
20
10
10
Pulse Test
5
0
25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage V
SD
(V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
V
DS
Monitor
L
Avalanche Waveform
1
L
•
I
AP2
•
2
V
DSS
V
DSS
- V
DD
E
AR
=
I
AP
Monitor
Rg
Vin
15 V
D. U. T
V
DD
V
(BR)DSS
I
AP
V
DS
50
Ω
I
D
0
V
DD
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
Rg
Vout
Monitor
D.U.T.
RL
V
DS
= 10 V
Vin
Vout
10%
10%
90%
10%
90%
td(off)
tf
Vin
10 V
90%
td(on)
tr
REJ03G1682-0200 Rev.2.00 May 27, 2008
Page 5 of 6
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