H7N0602LMTL-E datasheet, PDF - EEWORLD Datasheet

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H7N0602LMTL-E: DescriptionSilicon N Channel MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size116KB，9 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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H7N0602LMTL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

H7N0602LMTL-E Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	85 A
Maximum drain current (ID)	85 A
Maximum drain-source on-resistance	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e6
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	100 W
Maximum pulsed drain current (IDM)	340 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN BISMUTH
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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H7N0602LD, H7N0602LS, H7N0602LM

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1130-0600

Rev.6.00

Oct 16, 2006

Features

•

Low on-resistance

DS (on)

= 4.1 mΩ typ.

•

4.5 V gate drive devices

•

High Speed Switching

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK (L) )

1. Gate

2. Drain

3. Source

4. Drain

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

H7N0602LD

H7N0602LS

RENESAS Package code: PRSS0004AE-C

(Package name: LDPAK (S)-(2) )

H7N0602LM

Rev.6.00 Oct 16, 2006 page 1 of 8

H7N0602LMTL-E Related Products

	H7N0602LMTL-E	H7N0602LD	H7N0602LD-E	H7N0602LSTL-E
Description	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching
Is it Rohs certified?	conform to	incompatible	conform to	conform to
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	4	3
Reach Compliance Code	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	85 A	85 A	85 A	85 A
Maximum drain current (ID)	85 A	85 A	85 A	85 A
Maximum drain-source on-resistance	0.009 Ω	0.009 Ω	0.009 Ω	0.009 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2
JESD-609 code	e6	e0	e6	e6
Number of components	1	1	1	1
Number of terminals	2	3	3	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	250
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	100 W	100 W	100 W	100 W
Maximum pulsed drain current (IDM)	340 A	340 A	340 A	340 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO	YES
Terminal surface	TIN BISMUTH	TIN LEAD	TIN BISMUTH	TIN BISMUTH
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Is it lead-free?	Lead free	Contains lead	-	Lead free

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