Silicon N Channel MOS FET High Speed Power Switching
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Renesas Electronics Corporation |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 85 A |
| Maximum drain current (ID) | 85 A |
| Maximum drain-source on-resistance | 0.009 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 100 W |
| Maximum pulsed drain current (IDM) | 340 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| H7N0602LD | H7N0602LD-E | H7N0602LSTL-E | H7N0602LMTL-E | |
|---|---|---|---|---|
| Description | Silicon N Channel MOS FET High Speed Power Switching | Silicon N Channel MOS FET High Speed Power Switching | Silicon N Channel MOS FET High Speed Power Switching | Silicon N Channel MOS FET High Speed Power Switching |
| Is it Rohs certified? | incompatible | conform to | conform to | conform to |
| Maker | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation |
| package instruction | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 4 | 3 | 3 |
| Reach Compliance Code | compli | compli | compli | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Is Samacsys | N | N | N | N |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V | 60 V |
| Maximum drain current (Abs) (ID) | 85 A | 85 A | 85 A | 85 A |
| Maximum drain current (ID) | 85 A | 85 A | 85 A | 85 A |
| Maximum drain-source on-resistance | 0.009 Ω | 0.009 Ω | 0.009 Ω | 0.009 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSIP-T3 | R-PSIP-T3 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e0 | e6 | e6 | e6 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | 250 | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 100 W | 100 W | 100 W | 100 W |
| Maximum pulsed drain current (IDM) | 340 A | 340 A | 340 A | 340 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | YES | YES |
| Terminal surface | TIN LEAD | TIN BISMUTH | TIN BISMUTH | TIN BISMUTH |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Is it lead-free? | Contains lead | - | Lead free | Lead free |
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