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RJK0383DPA-00-J0

Description
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
File Size108KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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RJK0383DPA-00-J0 Overview

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

RJK0383DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1723-0101
Preliminary
Rev.1.01
Jul 10, 2008
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Pb-free
Halogen-free
Outline
WPAK
2
3
4
D1
D1
D1
9
S1/D2
5 6 7 8
1
G1
8
G2
9
S2
S2
S2
6
7
5
4 3 2 1
(Bottom View)
MOS1
MOS2 + SBD
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
Tch
Tstg
MOS1
30
±20
15
60
15
11
12.1
10
150
–55 to +150
MOS2
30
±20
45
180
45
20
40
30
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tch = 25°C, Rg
50
3. Tc = 25°C
REJ03G1723-0101 Rev.1.01 Jul 10, 2008
Page 1 of 4

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Description Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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