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HVL388C

Description
3.31 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size142KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HVL388C Overview

3.31 pF, SILICON, VARIABLE CAPACITANCE DIODE

HVL388C Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionEFP-2
Contacts2
Manufacturer packaging codeEFP-2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance4.57%
Minimum diode capacitance ratio1.88
Nominal diode capacitance3.31 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
HVL388C
Variable Capacitance Diode for VCO
REJ03G0363-0200
Rev.2.00
Mar 15, 2006
Features
High capacitance ratio. (n = 1.880 min)
Low series resistance. (rs = 0.75
max)
Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL388C
Laser Mark
9
Package Name
EFP
Package Code
PXSF0002ZA-A
Pin Arrangement
Cathode mark
Mark
1
9
2
1. Cathode
2. Anode
Rev.2.00 Mar 15, 2006 page 1 of 4
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