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H5TQ2G63BFR-11C

Description
DDR DRAM, 2GX1, 0.18ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96
Categorystorage    storage   
File Size962KB,93 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Environmental Compliance
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H5TQ2G63BFR-11C Overview

DDR DRAM, 2GX1, 0.18ns, CMOS, PBGA96, ROHS COMPLIANT, FBGA-96

H5TQ2G63BFR-11C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionTFBGA, BGA96,9X16,32
Contacts96
Reach Compliance Codeunknown
ECCN codeEAR99
access modeMULTI BANK PAGE BURST
Maximum access time0.18 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)900 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B96
JESD-609 codee1
length13 mm
memory density2147483648 bit
Memory IC TypeDDR DRAM
memory width1
Number of functions1
Number of ports1
Number of terminals96
word count2147483648 words
character code2000000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize2GX1
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA96,9X16,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.01 A
Maximum slew rate0.21 mA
Maximum supply voltage (Vsup)1.575 V
Minimum supply voltage (Vsup)1.425 V
Nominal supply voltage (Vsup)1.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width9 mm
Base Number Matches1

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