SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
2N3904E
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURES
Low Leakage Current
A
G
H
2
1
D
3
DIM
A
B
C
D
E
G
H
J
: I
CEX
=50nA(Max.), I
BL
=50nA(Max.)
@V
CE
=30V, V
EB
=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
Low Collector Output Capacitance
: C
ob
=4pF(Max.) @V
CB
=5V.
Complementary to 2N3906E.
: V
CE(sat)
=0.3V(Max.) @I
C
=50mA, I
B
=5mA.
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
J
C
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
RATING
60
40
6
200
50
100
150
-55 150
UNIT
V
V
V
mA
mA
mW
ESM
Marking
Type Name
ZC
2003. 12. 12
Revision No : 0
1/4
2N3904E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
SYMBOL
I
CEX
I
BL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1)
h
FE
(2)
DC Current Gain
*
h
FE
(3)
h
FE
(4)
h
FE
(5)
Collector-Emitter Saturation Voltage
*
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
f
T
C
ob
C
ib
h
ie
h
re
h
fe
h
oe
NF
V
CE
=5V, I
C
=0.1mA Rg=1k
f=10Hz 15.7kHz
V
out
V
in
275Ω
TEST CONDITION
V
CE
=30V, V
EB
=3V
V
CE
=30V, V
EB
=3V
I
C
=10 A, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10 A, I
C
=0
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
BE
=0.5V, I
C
=0, f=1MHz
MIN.
-
-
60
40
6.0
40
70
100
60
30
-
-
0.65
-
300
-
-
1.0
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
50
50
-
-
-
-
-
300
-
-
0.2
0.3
0.85
0.95
-
4.0
8.0
10
8.0
400
40
5.0
UNIT
nA
nA
V
V
V
V
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
*
V
MHz
pF
pF
k
x10
-4
V
CE
=10V, I
C
=1mA, f=1kHz
0.5
100
1.0
,
-
dB
Delay Time
t
d
10kΩ
C Total< 4pF
-
-
35
300ns
Rise Time
Switching Time
Storage Time
t
r
10.9V
-0.5V
V
CC
=3.0V
0
t
r
,t
f
< 1ns, Du=2%
V
out
-
-
35
nS
V
in
275Ω
t
stg
10kΩ
1N916
or equiv.
C Total< 4pF
-
-
200
Fall Time
t
f
20µs
10.9V
-9.1V
V
CC
=3.0V
0
t
r
,t
f
< 1ns, Du=2%
-
-
50
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2003. 12. 12
Revision No : 0
2/4
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