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MSV40,069-P55

Description
Variable Capacitance Diode, KU Band, 1.13pF C(T), 60V, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size592KB,4 Pages
ManufacturerCobham Semiconductor Solutions
Environmental Compliance
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MSV40,069-P55 Overview

Variable Capacitance Diode, KU Band, 1.13pF C(T), 60V, Silicon, HERMETIC SEALED, CERAMIC PACKAGE-2

MSV40,069-P55 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage60 V
ConfigurationSINGLE
Diode Capacitance Tolerance12.39%
Nominal diode capacitance1.13 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandKU BAND
JESD-30 codeO-CEMW-N2
JESD-609 codee4
Number of components1
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
minimum quality factor2400
surface mountYES
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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