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PS30U100CT

Description
DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 2 x 15A Forward voltage drop (Vf): 730mV @ 15A
CategoryDiscrete semiconductor    Schottky diode   
File Size353KB,3 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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PS30U100CT Overview

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 2 x 15A Forward voltage drop (Vf): 730mV @ 15A

PS30U100CT Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)100V
Average rectified current (Io)2 x 15A
Forward voltage drop (Vf)730mV @ 15A

PS30U100CT Preview

Download Datasheet
PS30U100CT&PS30U100FCT
PS30U100CT&PS30U100FCT
30 .0AMPS. SCHOTTKY BARRIER RECTIFIERS
FEATURE
.High
current capability
.Ultra
low forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed
260°C /10seconds, 0.25"(6.35mm)from case.
TO-220AB
PS30U100CT
ITO-220AB
PS30U100FCT
MECHANICAL DATA
.Case:
Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Mounting
position: any
MAXIMUM RATINGS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°C
Per Leg
Total device
Symbol
PS30U100CT&PS30U100FCT
100
70
100
15.0
30.0
175.0
550
-55 to +150
1.1N•m (10 lbf•in)
Units
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
J
T
J
,
T
STG
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operation Junction Temperature and Storage Temperature
Maximum Mounting torque, M3 or 6-32 srew
Per Leg
A
pF
°C
ELECTRICAL CHARACTERISTICS
-(per leg)
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
Test conditions
Typ
Max
0.52
0.55
0.73
0.43
0.50
0.70
100
25
PS30U100FCT
3.0
μA
mA
V
Units
T
J
=25℃
Forward voltage drop
V
F
T
J
=125℃
T
J
=25℃
T
J
=125℃
Reverse leakage current
I
R
I
F
=3A
I
F
=5A
I
F
=15A
I
F
=3A
I
F
=5A
I
F
=15A
V
R
=100V
V
R
=100V
Symbol
0.45
0.49
0.67
0.37
0.44
0.64
---
---
PS30U100CT
2.0
THERMAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 2)
Units
°C /W
R
(JC)
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Case
Version1.0-2015.2
1
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