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ADN9002-860

Description
Mixer Diode, Low Barrier, X Band, Silicon,
CategoryDiscrete semiconductor    diode   
File Size114KB,3 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

ADN9002-860 Overview

Mixer Diode, Low Barrier, X Band, Silicon,

ADN9002-860 Parametric

Parameter NameAttribute value
package instructionS-CDMW-F2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeMIXER DIODE
frequency bandX BAND
JESD-30 codeS-CDMW-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeSQUARE
Package formMICROWAVE
Pulse input maximum power0.1 W
Certification statusNot Qualified
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Schottky barrier typeLOW BARRIER
Base Number Matches1
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