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52CPQ030PBF

Description
50 A, 30 V, SILICON, RECTIFIER DIODE, TO-247AC
CategoryDiscrete semiconductor    diode   
File Size196KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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52CPQ030PBF Overview

50 A, 30 V, SILICON, RECTIFIER DIODE, TO-247AC

52CPQ030PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-247AC
package instructionR-PSFM-T3
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Maximum non-repetitive peak forward current2180 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current50 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)250
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin PD-20623 rev. B 10/06
MBR40L15CW
SCHOTTKY RECTIFIER
2 x 20 Amps
I
F(AV)
= 40Amp
V
R
= 15V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 20Apk, T
J
=125°C
(per leg, Typical)
Description/ Features
Units
A
V
A
V
The MBR40L15CW center tap Schottky rectifier module has
been optimized for ultra low forward voltage drop specifically
for the OR-ing of parallel power supplies. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in parallel
switching power supplies, converters, reverse battery pro-
tection, and redundant power subsystems.
125°C T
J
operation (V
R
< 5V)
Center tap module
Optimized for OR-ing applications
Ultra low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Value
40
15
700
0.26
- 55 to 125
°C
Case Styles
Base
Common
Cathode
2
1
3
2
Anode
1
Anode
2
Common
Cathode
TO-247AC
www.irf.com
1

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Description 50 A, 30 V, SILICON, RECTIFIER DIODE, TO-247AC 50 A, 30 V, SILICON, RECTIFIER DIODE, TO-247AC 50 A, 30 V, SILICON, RECTIFIER DIODE, TO-247AC

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