EDE5108AGSE-6E-E datasheet, PDF

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EDE5108AGSE-6E-E: Description512MB Fully Buffered DIMM; Categorystorage storage; File Size154KB，22 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en; Environmental Compliance

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EDE5108AGSE-6E-E Overview

512MB Fully Buffered DIMM

EDE5108AGSE-6E-E Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ELPIDA
Parts packaging code	BGA
package instruction	TFBGA, BGA60,9X11,32
Contacts	60
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B60
JESD-609 code	e1
length	11.5 mm
memory density	536870912 bi
Memory IC Type	DDR DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	60
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA60,9X11,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.01 A
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11 mm

EDE5108AGSE-6E-E Related Products

	EDE5108AGSE-6E-E	EDE5108AGSE-5C-E	EBE51FD8AGFD	EBE51FD8AGFN	EBE51FD8AGFD-6E-E	EBE51FD8AGFN-6E-E
Description	512MB Fully Buffered DIMM	512MB Fully Buffered DIMM	512MB Fully Buffered DIMM	512MB Fully Buffered DIMM	512MB Fully Buffered DIMM	512MB Fully Buffered DIMM
Maker	ELPIDA	ELPIDA	-	-	ELPIDA	ELPIDA
Parts packaging code	BGA	BGA	-	-	DIMM	DIMM
package instruction	TFBGA, BGA60,9X11,32	TFBGA, BGA60,9X11,32	-	-	DIMM,	DIMM,
Contacts	60	60	-	-	240	240
Reach Compliance Code	unknow	unknow	-	-	unknow	unknow
ECCN code	EAR99	EAR99	-	-	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	-	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B60	R-PBGA-B60	-	-	R-XDMA-N240	R-XDMA-N240
memory density	536870912 bi	536870912 bi	-	-	4831838208 bi	4831838208 bi
Memory IC Type	DDR DRAM	DDR DRAM	-	-	DDR DRAM MODULE	DDR DRAM MODULE
memory width	8	8	-	-	72	72
Number of functions	1	1	-	-	1	1
Number of ports	1	1	-	-	1	1
Number of terminals	60	60	-	-	240	240
word count	67108864 words	67108864 words	-	-	67108864 words	67108864 words
character code	64000000	64000000	-	-	64000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	-	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	-	-	85 °C	85 °C
organize	64MX8	64MX8	-	-	64MX72	64MX72
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	UNSPECIFIED	UNSPECIFIED
encapsulated code	TFBGA	TFBGA	-	-	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	-	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Certification status	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified
self refresh	YES	YES	-	-	YES	YES
Maximum supply voltage (Vsup)	1.9 V	1.9 V	-	-	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	-	-	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	-	-	1.8 V	1.8 V
surface mount	YES	YES	-	-	NO	NO
technology	CMOS	CMOS	-	-	CMOS	CMOS
Temperature level	OTHER	OTHER	-	-	OTHER	OTHER
Terminal form	BALL	BALL	-	-	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	-	-	DUAL	DUAL

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