BQ4015MB-85 datasheet, PDF - EEWORLD Datasheet

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BQ4015MB-85: DescriptionNon-Volatile SRAM, 512KX8, 85ns, CMOS,; Categorystorage storage; File Size263KB，10 Pages; ManufacturerBenchmarq Microelectronics Inc

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BQ4015MB-85 Overview

Non-Volatile SRAM, 512KX8, 85ns, CMOS,

BQ4015MB-85 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Maximum access time	85 ns
Other features	POWER SUPPLY WRITE PROTECTION
JESD-30 code	R-XDMA-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.005 A
Maximum slew rate	0.115 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

BQ4015MB-85 Related Products

	BQ4015MB-85	BQ4015YMB-120	BQ4015YMB-120N	BQ4015YMB-85	BQ4015YMB-85N	BQ4015MB-120
Description	Non-Volatile SRAM, 512KX8, 85ns, CMOS,	Non-Volatile SRAM, 512KX8, 120ns, CMOS,	Non-Volatile SRAM, 512KX8, 120ns, CMOS,	Non-Volatile SRAM, 512KX8, 85ns, CMOS,	Non-Volatile SRAM, 512KX8, 85ns, CMOS,	Non-Volatile SRAM, 512KX8, 120ns, CMOS,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	85 ns	120 ns	120 ns	85 ns	85 ns	120 ns
JESD-30 code	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM	NON-VOLATILE SRAM
memory width	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A	0.005 A
Maximum slew rate	0.115 mA	0.115 mA	0.115 mA	0.115 mA	0.115 mA	0.115 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.75 V	4.5 V	4.5 V	4.5 V	4.5 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Other features	POWER SUPPLY WRITE PROTECTION	POWER SUPPLY WRITE PROTECTION	POWER SUPPLY WRITE PROTECTION	POWER SUPPLY WRITE PROTECTION	-	POWER SUPPLY WRITE PROTECTION
Base Number Matches	1	1	1	1	1	-

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