Memory Circuit, 4MX16, CMOS, PBGA77, FBGA-77
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | BGA |
| package instruction | TFBGA, |
| Contacts | 77 |
| Reach Compliance Code | compliant |
| Other features | CELLULARRAM IS ORGANIZED AS 4M X 16 |
| JESD-30 code | R-PBGA-B77 |
| JESD-609 code | e0 |
| length | 10 mm |
| memory density | 67108864 bit |
| Memory IC Type | MEMORY CIRCUIT |
| memory width | 16 |
| Number of functions | 1 |
| Number of terminals | 77 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -25 °C |
| organize | 4MX16 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) | 235 |
| Certification status | Not Qualified |
| Maximum seat height | 1.2 mm |
| Maximum supply voltage (Vsup) | 1.95 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | OTHER |
| Terminal surface | TIN LEAD SILVER |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 30 |
| width | 8 mm |
| Base Number Matches | 1 |
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