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MMBT4403

Description
600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
Categorysemiconductor    Discrete semiconductor   
File Size166KB,4 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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MMBT4403 Overview

600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236

MMBT4403 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum on-time255 ns
Maximum off time35 ns
Maximum collector current0.6000 A
Maximum Collector-Emitter Voltage40 V
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor20
Rated crossover frequency200 MHz
BL
Galaxy Electrical
PNP General Purpose Transistor
FEATURES
Epitaxial planar die construction.
Complementary NPN type available
(MMBT4401).
Also available in lead free version.
Ideal for medium power amplification and switching.
Production specification
MMBT4403
Pb
Lead-free
APPLICATIONS
Ideal for medium power amplification and switching
SOT-23
ORDERING INFORMATION
Type No.
MMBT4403
Marking
2T
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
,T
stg
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
Collector dissipation
junction and storage temperature
Value
-40
-40
-5
-0.6
0.35
-55-150
UNIT
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC074
Rev.A
www.galaxycn.com
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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