RF51883V
1950 MHz W-
CDMA Linear
Power Ampli-
fier Module
RF5188
3V 1950MHZ W-CDMA LINEAR POWER
AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 3 x 3
]
VCCBIAS
Input/Output Internally
Matched@50Ω
27.5dBm Linear Output Power
42% Peak Linear Efficiency
28dB Linear Gain
-42dBc ACLR @ ±5MHz
HSDPA Capable
RF IN 1
GND 2
VMODE 3
16
15
14
13
NC
IM
Features
VCC1/IM
12 VCC2
11 VCC2
10 VCC2
Bias
9 RF OUT
VREG 4
Applications
3V W-CDMA Band 1 Handsets
Multi-Mode W-CDMA 3G Hand-
sets
3V TD-SCDMA Handsets
Spread-Spectrum Systems
5
NC
6
NC
7
NC
8
NC
Functional Block Diagram
Product Description
The RF5188 is a high-power, high-efficiency linear amplifier module specifically
designed for 3V handheld systems. The device is manufactured on an advanced
third generation GaAs HBT process, and was designed for use as the final RF ampli-
fier in 3V W-CDMA handheld digital cellular equipment, spread-spectrum systems,
and other applications in the 1920MHz to 1980MHz band (Band 1). The RF5188
has a digital control line for low power applications to lower quiescent current. The
RF5188 is assembled in at 16-pin, 3mmx3mm, QFN package.
Ordering Information
RF5188
RF5188PCBA-41X
3V 1950MHz W-CDMA Linear Power Amplifier Module
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A4 DS060310
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 8
RF5188
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (P
OUT
≤31dBm)
Control Voltage (V
REG
)
Input RF Power
Mode Voltage (V
MODE
)
Operating Temperature
Storage Temperature
Moisture Sensitivity Level
(IPC/JEDEC J-STD-20)
Rating
+8.0
+5.2
+3.9
+10
+3.9
-30 to +110
-40 to +150
MSL 2 @ 260
Unit
V
V
V
dBm
V
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
T=25
o
C Ambient, V
CCBIAS
=3.4V,
V
CC
=3.4V, V
REG
=2.8V, V
MODE
=0V, and
P
OUT
=27.5dBm for all parameters (unless oth-
erwise specified). Modulation is 3GPP 3.2 03-
00 DPCCH+1DPDCH.
High Gain Mode (V
MODE
Low)
Operating Frequency Range
Linear Gain
Harmonics
Maximum Linear Output
Linear Efficiency
Maximum I
CC
ACLR1 @ ±5MHz
ACLR2 @ ±10MHz
Input VSWR
Output VSWR Stability
Ruggedness
Noise Power
1920
26
27.5
38
352
42
394
-42
-53
1.7:1
28.5
1980
32
-10
47
435
-37
-48
6:1
10:1
-150
-133
-140
-143
-147
-107
MHz
dB
dBm
dBm
%
mA
dBc
dBc
No oscillation>-70dBc
No damage
dBm/Hz
dBm/Hz
dBm/Hz
dBm/Hz
dBm/Hz
dBm/Hz
-50<P
OUT
<+27.5dBm, RX=925MHz to
960MHz (EGSM)
-50<P
OUT
<+27.5dBm, RX=1805MHz to
1880MHz (DCS)
-50<P
OUT
<+27.5dBm, RX=2110MHz to
2170MHz (W-CDMA), TX/RX Offset=130MHz
-50<P
OUT
<+27.5dBm, RX=2110MHz to
2170MHz (W-CDMA), TX/RX Offset=190MHz
-50<P
OUT
<+27.5dBm, RX=2400MHz to
2480MHz (Bluetooth)
-50<P
OUT
<+27.5dBm, TX=1932.3MHz to
1980MHz, RX=1893.5MHz to 1919.6MHz
(PHS)
IF offset f
O
+5MHz with CW signal=-40dBc
IF offset f
O
+10MHz with CW signal=-40dBc
f=2fo, 3fo
IM Products
IM 5MHz
IM 10MHz
-31
-41
dBc
dBc
2 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A4 DS060310
RF5188
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
T=25
o
C Ambient, V
CCBIAS
=3.4V,
V
CC
=1.5V, V
REG
=2.8V, V
MODE
=2.8V, and
P
OUT
=16dBm for all parameters (unless other-
wise specified). Modulation is 3GPP 3.2 03-00
DPCCH+1DPDCH.
1920
22
16
18.3
21.0
-41
-54
105
125
2:1
6:1
10:1
IM Products
IM 5MHz
IM 10MHz
-31
-41
3.2
0.6
V
CC
Bias
High Gain Idle Current
(I
CC1
/I
CC2
/I
CCBIAS
)
Low Gain Idle Current
(I
CC1
/I
CC2
/I
CCBIAS
)
V
REG
Current
V
MODE
Current
RF Turn On/Off Time
DC Turn On/Off Time
Total Current (Power Down)
V
REG
Low Voltage (Power Down)
V
REG
High Voltage (Recom-
mended)
V
REG
High Voltage (Operational)
V
MODE
Voltage
V
MODE
Voltage
0
2.75
2.7
0
2.0
2.8
1.5
70
60
1
250
1.2
2
0.2
6
25
0.5
0.5
2.95
3.0
0.5
3.0
4.2
93
83
3
3.4
4.2
dBc
dBc
V
V
V
mA
mA
mA
uA
uS
uS
uA
V
V
V
V
V
High Gain Mode
Low Gain Mode
V
MODE
=low and V
REG
=2.8V, V
CC
=3.4V
V
MODE
=high and V
REG
=2.8V, V
CC
=1.5V
Low power with DC to DC Converter
IF offset f
O
+5MHz with CW signal=-40dBc
IF offset f
O
+10MHz with CW signal=-40dBc
No oscillation>-65dBc
No damage
25.3
-37
-48
145
26
1980
31
MHz
dB
dBm
%
dBc
dBc
mA
Low Gain Mode (V
MODE
High)
Operating Frequency Range
Linear Gain
Maximum Linear Output
Linear Efficiency
ACLR @ ±5MHz
ACLR @ ±10MHz
Maximum I
CC
Input VSWR
Output VSWR Stability
Ruggedness
Power Supply
Supply Voltage (V
CC1
and V
CC2
)
Rev A4 DS060310
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 8
RF5188
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pkg
Base
Function
RF IN
GND
VMODE
VREG
NC
NC
NC
NC
RF OUT
VCC2
VCC2
VCC2
NC
IM
VCC1/IM
VCCBIAS
GND
Description
RF input internally matched to 50Ω. This input is internally AC-coupled.
Ground connection.
For nominal operation (High Power mode), V
MODE
is set LOW. When set
HIGH, devices are biased lower to improve efficiency at lower output levels.
Regulated voltage supply for amplifier bias circuit. In power down mode,
both V
REG
and V
MODE
need to be LOW (<0.5V).
No connection. Do not connect this pin to any external circuit.
No connection. Do not connect this pin to any external circuit.
No connection. Do not connect this pin to any external circuit.
No connection. Do not connect this pin to any external circuit.
RF output. Internally AC-coupled.
Output stage collector supply. Please see the schematic for required exter-
nal components.
Same as pin 10.
Same as pin 10.
No connection. Do not connect this pin to any external circuit.
Interstage matching. Connect to pin 15.
First stage collector supply and interstage matching. A 4.7μF decoupling
capacitor may be required. Connect to pin 14.
Power supply input for the DC bias circuitry.
Ground connection. The backside of the package should be soldered to a
top side ground pad which is connected to the ground plane with multiple
vias. The pad should have a short thermal path to the ground plane.
Interface Schematic
Package Drawing
3.00
Pin 1 ID
A
1.45
Pin 1 ID
3.00
1.45
0.28
TYP
0.18
0.05
0.15 C
2 PLCS
B
0.15 C
2 PLCS
0.40
TYP
0.20
0.10 M C A B
0.50 TYP
0.203 REF
0.08 C
0.08 C
0.925
0.775
Shaded areas represent pin 1.
0.102 REF
Dimensions in mm.
C
4 of 8
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A4 DS060310
RF5188
Application Schematic
VCC BIAS
L2
1 nF
10 ?
F
V
CC
16
15
14
13
RF IN
1
2
12
11
10
Bias
9
RF OUT
Matching
Component
1 nF
Place this component
next to RF5188 with
minimal trace length to
the PA.
VMODE
1 nF
3
4
VREG
1 nF
5
6
7
8
VCC BIAS can be connected to VCC; however, VCC must be maintained above 1.5 V.
L2 = 8.2 nH and may be needed to provide isolation between VCC1 and VCC2 depending on layout.
Circuit Optimization for Various Output Power Requirements
Output Power (dBm)
28
27.5
26.5
26
25
Matching Component
12nH
N/A
0.5pF
1.0pF
1.5pF
GRM1555C1HR50BZ01E (Murata)
GRM1555C1H1R0BZ01E (Murata)
GRM1555C1H1R5BZ01E (Murata)
Sample Part Number
LQG15HN12NJ02D (Murata)
Typical Efficiency (%)
41
42
42
42
41
Rev A4 DS060310
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 8
RF/Wirelessly
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