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US1A

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size110KB,2 Pages
ManufacturerDAESAN
Websitehttp://www.diodelink.com
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US1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC

US1A THRU US1M
Features
· Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
· Low forward voltage drop
· High current capability
· High reliability
· Low power loss, high effciency
· High surge current capability
· High speed switching
· Low leakage
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
DO-214AC (SMA)
0.058(1.47)
0.052(1.32)
0.110(2.79)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.31)
0.006(0.15)
0.090(2.29)
0.078(1.98)
0.060(1.52)
0.030(0.76)
0.005(0.127)
MAX.
0.208(5.28)
0.194(4.93)
Mechanical Data
· Case : JEDEC DO-214AC(SMA)molded plastic body
· Lead : Solder Plated, solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Weight: 0.002 ounce, 0.064 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
T
=75℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 1.0A
Maximum DC Reverse Current at rated DC
blocking voltage T
A
= 25℃
Maximum full load reverse current full cycle
average. 0.375"(9.5mm) lead length at
T
A
=100℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating Junction and Storage
temperature Range
I
R
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
US1A US1B US1D US1E US1G US1J
50
35
50
100
70
100
200
140
200
300
210
300
1.0
30.0
1.0
1.3
5.0
400
280
400
600
420
600
US1K US1M
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
1.7
Volts
μA
100
Trr
C
J
T
J
T
STG
50
20
-55 to +150
75
15
ns
pF
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

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US1A US1B US1D US1G US1M US1K US1J US1E
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
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