IR060LM06CS02CFPBF datasheet, PDF

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IR060LM06CS02CFPBF: DescriptionRectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER; CategoryDiscrete semiconductor diode; File Size121KB，3 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IR060LM06CS02CFPBF Overview

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

IR060LM06CS02CFPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	WAFER
package instruction	O-XUUC-N
Reach Compliance Code	compliant
ECCN code	EAR99
application	FAST RECOVERY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-XUUC-N
Number of components	1
Phase	1
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.055 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	40
Base Number Matches	1

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Bulletin I0129J rev. C 02/00

IR060LM06CS02CB

FAST RECOVERY DIODE

Junction Size:

Wafer Size:

RRM

Class:

Passivation Process:

Reference IR Packaged Part:

Square 60 x 60 mils

600 V

Glassivated MOAT

Major Ratings and Characteristics

Parameters

Maximum Forward Voltage

Units

1.3 V

600 V

55 ns

Test Conditions

= 25°C, I

= 2 A

= 25°C, I

RRM

= 10 µA

= 25°C, I

= 1A, -di/dt = 100A/µs

(1)

RRM

Reverse Breakdown Voltage

Typical Reverse Recovery Time

(1)

Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

100% Al, (5 µm)

60 x 60 mils (see drawing)

100 mm, with std. < 110 > flat

260 µm, ± 10 µm

45 µm

0.25 mm diameter minimum

See drawing

Storage in original container, in essicated

nitrogen, with no contamination

www.irf.com

IR060LM06CS02CFPBF Related Products

	IR060LM06CS02CFPBF	IR060LM06CS02CBPBF
Description	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Parts packaging code	WAFER	WAFER
package instruction	O-XUUC-N	O-XUUC-N
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
application	FAST RECOVERY	FAST RECOVERY
Configuration	SINGLE	SINGLE
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-XUUC-N	O-XUUC-N
Number of components	1	1
Phase	1	1
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	ROUND	ROUND
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	260	260
Certification status	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	600 V
Maximum reverse recovery time	0.055 µs	0.055 µs
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	40	40

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