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GS8182T19BD-375I

Description
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
Categorystorage    storage   
File Size337KB,27 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
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GS8182T19BD-375I Overview

DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165

GS8182T19BD-375I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionLBGA, BGA165,11X15,40
Contacts165
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.B
Maximum access time0.45 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)375 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density18874368 bit
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum standby current0.18 A
Minimum standby current1.7 V
Maximum slew rate0.49 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
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