M36L0R8060T1ZAQT datasheet, PDF

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M36L0R8060T1ZAQT: Description256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package; Categorystorage storage; File Size22KB，1 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M36L0R8060T1ZAQT Overview

256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package

M36L0R8060T1ZAQT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	BGA
package instruction	8 X 10 MM, 0.80 MM PITCH, TFBGA-88
Contacts	88
Reach Compliance Code	_compli
Other features	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
JESD-30 code	R-PBGA-B88
JESD-609 code	e0
length	10 mm
memory density	268435456 bi
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+PSRAM
Number of functions	1
Number of terminals	88
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA88,8X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.00011 A
Maximum slew rate	0.052 mA
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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Description	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package	256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
Is it Rohs certified?	incompatible	conform to	conform to	-	incompatible	conform to	conform to	-
Maker	STMicroelectronics	STMicroelectronics	STMicroelectronics	-	STMicroelectronics	STMicroelectronics	STMicroelectronics	-
Parts packaging code	BGA	BGA	BGA	-	BGA	BGA	BGA	-
package instruction	8 X 10 MM, 0.80 MM PITCH, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88	-	8 X 10 MM, 0.80 MM PITCH, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88	-
Contacts	88	88	88	-	88	88	88	-
Reach Compliance Code	_compli	unknow	unknow	-	_compli	unknow	compli	-
Other features	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	-	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	PSEUDO SRAM IS ORGANIZED AS 4M X 16; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	-
JESD-30 code	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	-	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	-
JESD-609 code	e0	e1	e1	-	e0	e1	e1	-
length	10 mm	10 mm	10 mm	-	10 mm	10 mm	10 mm	-
memory density	268435456 bi	268435456 bi	268435456 bi	-	268435456 bi	268435456 bi	268435456 bi	-
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	-
memory width	16	16	16	-	16	16	16	-
Mixed memory types	FLASH+PSRAM	FLASH+PSRAM	FLASH+PSRAM	-	FLASH+PSRAM	FLASH+PSRAM	FLASH+PSRAM	-
Number of functions	1	1	1	-	1	1	1	-
Number of terminals	88	88	88	-	88	88	88	-
word count	16777216 words	16777216 words	16777216 words	-	16777216 words	16777216 words	16777216 words	-
character code	16000000	16000000	16000000	-	16000000	16000000	16000000	-
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	-
Maximum operating temperature	85 °C	85 °C	85 °C	-	85 °C	85 °C	85 °C	-
Minimum operating temperature	-25 °C	-25 °C	-25 °C	-	-25 °C	-25 °C	-25 °C	-
organize	16MX16	16MX16	16MX16	-	16MX16	16MX16	16MX16	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	TFBGA	TFBGA	TFBGA	-	TFBGA	TFBGA	TFBGA	-
Encapsulate equivalent code	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	-	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	-
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260	-	NOT SPECIFIED	260	260	-
power supply	1.8 V	1.8 V	1.8 V	-	1.8 V	1.8 V	1.8 V	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	-
Maximum standby current	0.00011 A	0.00011 A	0.00011 A	-	0.00011 A	0.00011 A	0.00011 A	-
Maximum slew rate	0.052 mA	0.052 mA	0.052 mA	-	0.052 mA	0.052 mA	0.052 mA	-
Maximum supply voltage (Vsup)	1.95 V	1.95 V	1.95 V	-	1.95 V	1.95 V	1.95 V	-
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	-	1.7 V	1.7 V	1.7 V	-
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	-	1.8 V	1.8 V	1.8 V	-
surface mount	YES	YES	YES	-	YES	YES	YES	-
technology	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	-
Temperature level	OTHER	OTHER	OTHER	-	OTHER	OTHER	OTHER	-
Terminal surface	Tin/Lead (Sn/Pb)	TIN SILVER COPPER	TIN SILVER COPPER	-	Tin/Lead (Sn/Pb)	TIN SILVER COPPER	TIN SILVER COPPER	-
Terminal form	BALL	BALL	BALL	-	BALL	BALL	BALL	-
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
width	8 mm	8 mm	8 mm	-	8 mm	8 mm	8 mm	-

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