AT28C64B-25SJT/R datasheet, PDF

AT28C64B-25SJT/R: DescriptionEEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28; Categorystorage storage; File Size306KB，12 Pages; ManufacturerAtmel (Microchip); Environmental Compliance

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AT28C64B-25SJT/R Overview

EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	SOIC
package instruction	SOP,
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	250 ns
Other features	AUTOMATIC WRITE
JESD-30 code	R-PDSO-G28
JESD-609 code	e3
length	17.9 mm
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	1
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	2.65 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	7.5 mm
Base Number Matches	1

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