2SK2803 datasheet, PDF - EEWORLD Datasheet

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2SK2803: DescriptionMOSFET; CategoryDiscrete semiconductor The transistor; File Size42KB，2 Pages; ManufacturerSANKEN; Websitehttp://www.sanken-ele.co.jp/en/; Environmental Compliance

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2SK2803 Overview

MOSFET

2SK2803 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Other features	UL APPROVED
Avalanche Energy Efficiency Rating (Eas)	30 mJ
Shell connection	ISOLATED
Configuration	SINGLE
Minimum drain-source breakdown voltage	450 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	2.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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2SK2803

Absolute Maximum Ratings

Symbol

V

DSS

V

GSS

I

D

I

D (pulse)

*

1

P

D

E

AS

*

2

I

AS

Tch

Tstg

Ratings

450

±30

±3

±12

30 (Tc = 25ºC)

30

3

150

–55 to +150

(Ta = 25ºC)

External dimensions 1 ...... FM20

Electrical Characteristics

Symbol

V

(BR) DSS

I

GSS

I

DSS

A

W

mJ

A

ºC

V

TH

Re

(yfs)

R

DS (on)

Ciss

Coss

Crss

t

d (on)

t

r

t

d (off)

t

f

V

SD

2.0

1.5

2.1

340

75

26

18

30

45

85

0.9

1.4

2.8

min

450

Ratings

typ

max

±100

100

4.0

Unit

V

nA

µA

V

S

Ω

pF

ns

V

I

SD

= 3A, V

GS

= 0V

I

D

= 1.5A, V

DD

200V,

R

L

= 133Ω, V

GS

= 10V,

See Figure 2 on Page 5.

(Ta = 25ºC)

Unit

V

Conditions

I

D

= 100µA, V

GS

= 0V

V

GS

=

±30V

V

DS

= 450V, V

GS

= 0V

V

DS

= 10V, I

D

= 1mA

V

DS

= 20V, I

D

= 1.5A

V

GS

= 10V, I

D

= 1.5A

V

DS

= 10V, f = 1.0MHz,

V

GS

= 0V

duty cycle 1%

W

*

1: P

DD

=100µs,L = 6.3mH, I

L

= 3.0A,

2: V

30V,

*

See Figure 1 on Page 5.

unclamped, R

G

= 50Ω,

I

D

– V

DS

Characteristics

(typical)

3.0

10V

6V

5.5V

I

D

– V

GS

Characteristics

(typical)

3.0

V

DS

=20V

R

DS(ON)

– I

D

Characteristics

(typical)

4

V

GS

=10V

3

R

DS (ON)

(Ω)

25°C

– 55°C

2.0

I

D

(A)

I

D

(A)

2

5V

1.0

4.5V

0

V

GS

= 4V

0

5

10

15

20

1.0

T

C

=125°C

1

0

2

4

6

8

0

1

2

3

V

DS

(V)

V

GS

(V)

I

D

(A)

Re

(yfs)

– I

D

Characteristics

(typical)

5

V

DS

= 20V

V

DS

– V

GS

Characteristics

(typical)

10

8

R

DS(ON)

– T

C

Characteristics

(typical)

5

I

D

=1.5A

V

GS

=10V

4

R

DS (ON)

(Ω)

Re

(yfs)

(S)

1

V

DS

(V)

T

C

= – 55°C

25°C

125°C

I

D

=3A

6

3

2

1

0

4

I

D

=1.5A

0.5

0.3

0.05 0.1

2

0

0.5

1.0

3.0

3

5

10

20

—50

0

50

100

150

I

D

(A)

V

GS

(V)

Tc (ºC)

Capacitance – V

DS

Characteristics

(typical)

1000

500

V

GS

= 0V

f =1MHz

Ciss

I

DR

– V

SD

Characteristics

(typical)

3

Safe Operating Area

20

10 I

D

(pulse) max

5

I

D

max

S

R

D

N)

(O

ED

(T

C

= 25°C)

10

P

D

– Ta Characteristics

30

0

µ

Capacitance (pF)

s

W

ith

2

10

DC

OP

1m

m

s(

1s

in

s

fin

I

DR

(A)

I

D

(A)

20

ite

100

50

Coss

1

0.5

V

GS

= 0V

1

5V,10V

LI

M

IT

ER

ho

N

P

D

(W)

at

he

AT

t)

sin

k

IO

10

0.1

Crss

10

0

10

20

30

40

50

0

0.5

1.0

1.5

0.05

0.03

Without heatsink

3

5

10

50 100

500

0

50

100

150

V

DS

(V)

V

SD

(V)

V

DS

(V)

Ta (ºC)

39

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