NE434S01-T1B datasheet, PDF - EEWORLD Datasheet

NE434S01-T1B: DescriptionC BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size145KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN

Parameter Name	Attribute value
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
FET technology	JUNCTION
Maximum operating temperature	125 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Base Number Matches	1

	NE434S01-T1B	NE434S01-T1
Description	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN
Contacts	4	4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
FET technology	JUNCTION	JUNCTION
Maximum operating temperature	125 °C	125 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W
surface mount	YES	YES
Base Number Matches	1	1

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