NE434S01-T1 datasheet, PDF - EEWORLD Datasheet

NE434S01-T1: DescriptionC BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size145KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

Download Datasheet Parametric Compare View All

NE434S01-T1 Overview

C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN

Parameter Name	Attribute value
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
FET technology	JUNCTION
Maximum operating temperature	125 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W
surface mount	YES
Base Number Matches	1

	NE434S01-T1	NE434S01-T1B
Description	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN	C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET, PLASTIC, S01, 4 PIN
Contacts	4	4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
FET technology	JUNCTION	JUNCTION
Maximum operating temperature	125 °C	125 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.3 W	0.3 W
surface mount	YES	YES
Base Number Matches	1	1

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components