Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Parameter Name | Attribute value |
Parts packaging code | SFM |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum collector current (IC) | 10 A |
Collector-emitter maximum voltage | 80 V |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Minimum DC current gain (hFE) | 500 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 80 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Transistor component materials | SILICON |
Base Number Matches | 1 |
TIP141T | TIP140T | TIP142T | |
---|---|---|---|
Description | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
Parts packaging code | SFM | SFM | SFM |
package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 | 3 | 3 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 10 A | 10 A | 10 A |
Collector-emitter maximum voltage | 80 V | 60 V | 100 V |
Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Minimum DC current gain (hFE) | 500 | 500 | 500 |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
Number of components | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 80 W | 80 W | 80 W |
Certification status | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE |
Transistor component materials | SILICON | SILICON | SILICON |
Maker | - | SAMSUNG | SAMSUNG |