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71V3577YS85BGGI8

Description
Standard SRAM, 128KX36, 8.5ns, CMOS, PBGA119
Categorystorage    storage   
File Size237KB,22 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
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71V3577YS85BGGI8 Overview

Standard SRAM, 128KX36, 8.5ns, CMOS, PBGA119

71V3577YS85BGGI8 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Maximum access time8.5 ns
Maximum clock frequency (fCLK)87 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee1
memory density4718592 bit
Memory IC TypeSTANDARD SRAM
memory width36
Humidity sensitivity level3
Number of terminals119
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
Maximum standby current0.035 A
Minimum standby current3.14 V
Maximum slew rate0.19 mA
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
Base Number Matches1
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