Bulletin I27204 09/05
IRK....PbF SERIES
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
Lead-Free
MAGN-A-pak Power Modules
170A
250A
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing com-
mon heatsinks and compact assemblies to be built. They
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose appli-
cations such as battery chargers, welders, motor drives,
U.P.S., etc.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
V
DRM
/ V
RRM
T
J
range
IRK.170..
170
377
5100
5350
131
119
1310
Up to 1600
IRK.250..
250
555
8500
8900
361
330
3610
Up to 1600
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
-40 to 130
C
Document Number: 94417
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1
IRK.170PbF, .250PbF Series
Bulletin I27204 09/05
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
V
RRM
V
DRM
, maximum
repetitive peak reverse and
off-state blocking voltage
V
400
800
1200
1400
1600
V
RSM
, maximum non-repetitive
peak reverse voltage
V
500
900
1300
1500
1700
I
RRM
I
DRM
max
@ 130°C
mA
50
IRK.170-
IRK.250-
04
08
12
14
16
On-state Conduction
Parameters
I
T(AV)
Maximum average on-state current
@ Case temperature
I
T(RMS)
Maximum RMS on -state current
I
TSM
Maximum peak, one-cycle on-state,
non-repetitive surge current
IRK.170
170
85
377
5100
5350
4300
4500
It
2
IRK.250
250
85
555
8500
8900
7150
7500
361
330
255
233
3610
0.97
1.00
0.60
0.57
1.44
500
1000
Units Conditions
A
o
180
o
conduction, half sine wave
as AC switch
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
Sinusoidal half wave,
C
A
A
Maximum I t for fusing
2
131
119
92.5
KA s t = 10ms No voltage initial T
J
= T
J
max
t = 8.3ms reapplied
t = 10ms 100% V
RRM
t = 8.3ms reapplied
KA
√s
t = 0.1 to 10ms, no voltage reapplied
2
2
I
√t
2
Maximum I
√t
for fusing
2
84.4
1310
0.89
1.12
1.34
0.96
1.60
500
1000
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level on-state slope resistance
High level on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
m
Ω
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
I
TM
=
π
x I
T(AV)
, T
J
= T
J
max., 180
o
conduction
Av. power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
mA Anode supply=12V, initial I
T
=30A, T
J
=25
o
C
Anode supply=12V, resistive load=1Ω
gate pulse: 10V, 100µs, T
J
= 25°C
Switching
Parameters
t
d
t
r
t
q
Typical delay time
Typical rise time
Typical turn-off time
IRK.170
1.0
2.0
50 - 150
µs
IRK.250
Units Conditions
µs
T
J
= 25
o
C, Gate Current=1A dI
g/dt
=1A/µs
Vd = 0,67% V
DRM
I
TM
= 300 A ; -dI/dt=15 A/µs; T
J
= T
J
max ;
Vr = 50 V; dV/dt = 20 V/µs ; Gate 0 V, 100 ohm
Document Number: 94417
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2
IRK.170PbF, .250PbF Series
Bulletin I27204 09/05
Blocking
Parameters
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
V
INS
RMS isolation voltage
dv/
dt
Critical rate of rise of off-state voltage
3000
1000
V
50Hz, circuit to base, all termin. shorted, 25°C,1s
V/µs T
J
= T
J
max, exponential to 67% rated V
DRM
IRK.170
50
IRK.250
Units Conditions
mA T
J
=T
J
max.
Triggering
Parameters
I
P
GM
IRK.170
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
IRK.250
Units Conditions
W
W
A
V
V
V
V
mA
mA
mA
V
tp
≤
5ms,
f = 50Hz,
tp
≤
5ms,
tp
≤
5ms,
T
J
= - 40
o
C
T
J
= 25 C
o
Maximum peak gate power
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
Anode supply = 12V, resistive
load ; Ra = 1Ω
Anode supply = 12V, resistive
load ; Ra = 1Ω
P
G(AV)
Maximum average gate power
+I
GM
-V
GT
V
GT
Maximum peak gate current
Max. peak negative gate voltage
Maximum required DC gate
voltage to trigger
I
GT
Maximum required DC gate
current to trigger
V
GD
I
GD
di/
dt
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Max rate of rise of
turned-on current
T
J
= T
J
max.
T
J
= - 40
o
C
T
J
= 25
o
C
T
J
= T
J
max.
@ T
J
= T
J
max., rated V
DRM
applied
0.25
10.0
500
mA @ T
J
= T
J
max., rated V
DRM
applied
A/µs @ T
J
= T
J
max., I
TM
= 400 A rated V
DRM
applied
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating temperature
Storage temperature range
IRK.170
IRK.250
Units Conditions
o
o
-40 to 130
-40 to 150
0.17
0.02
0.125
0.02
C
C
R
thJC
Maximum thermal resistance
junction to case
R
thC-S
Thermal resistance, case to heatsink
T
Mounting tourque ±10%
MAP to heatsink
Busbar to MAP
wt
Approximate weight
Case style
K/W Per junction, DC operation
K/W
Mounting surface flat, smooth and greased
(per module)
A mounting compound is recommended and the
4 to 6
4 to 6
500
17.8
MAGN-A-pak
Nm tourque should be rechecked after a period of
Nm about 3 hours to allow for the spread of the
compound
g
oz
Document Number: 94417
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3
IRK.170PbF, .250PbF Series
Bulletin I27204 09/05
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRK.170-
IRK.250-
Sinusoidal conduction @ T
J
max.
180
o
Rectangular conduction @ T
J
max.
30
o
120
o
90
o
60
o
180
o
120
o
0.011
0.011
90
o
0.015
0.015
60
o
0.020
0.020
30
o
0.033
0.033
Units
K/W
0.009
0.009
0.010
0.010
0.010
0.014
0.020
0.020
0.032
0.032
0.007
0.007
Ordering Information Table
Device Code
IRK
1
T
2
250
3
-
16 PbF
4
5
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Outline Table)
Current rating
Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
Lead-Free
Document Number: 94417
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4
IRK.170PbF, .250PbF Series
Bulletin I27204 09/05
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
IRKT...
IRKH...
IRKL...
AVAILABLE FROM 400V TO 1600V
IRKU...
IRKV...
IRKK...
IRKN...
AVAILABLE ON 1600V
CONTACT FACTORY FOR
DIFFERENT REQUIREMENT
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 94417
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