GAPM2055N datasheet, PDF - EEWORLD Datasheet

GAPM2055N: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size462KB，10 Pages; ManufacturerSY Sinyork Co., Ltd.

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GAPM2055N Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	12 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	85 °C
Polarity/channel type	N-CHANNEL
surface mount	YES
Base Number Matches	1

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