2SD2115S datasheet, PDF - EEWORLD Datasheet

2SD2115S: DescriptionSilicon NPN Epitaxial Planar(Low frequency power amplifier); CategoryDiscrete semiconductor The transistor; File Size26KB，5 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SD2115S Overview

Silicon NPN Epitaxial Planar(Low frequency power amplifier)

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	150
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	18 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

	2SD2115S	2SD2115(L)/(S)	2SD2115	2SD2115L
Description	Silicon NPN Epitaxial Planar(Low frequency power amplifier)	Silicon NPN Epitaxial Planar(Low frequency power amplifier)	Silicon NPN Epitaxial Planar(Low frequency power amplifier)	Silicon NPN Epitaxial Planar(Low frequency power amplifier)
Reach Compliance Code	unknow	-	unknow	unknow
Maximum collector current (IC)	2 A	-	2 A	2 A
Configuration	SINGLE	-	Single	SINGLE
Polarity/channel type	NPN	-	NPN	NPN
surface mount	YES	-	YES	NO
Base Number Matches	1	-	1	1

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